component
SSM3J353F
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSSM3J353F
TOSHIBA · MOSFETs · TO-236-3(SOT-23-3)
SSM3J353F from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel MOSFET; the gate-source voltage is rated -25 V / +20 V (VGSS) absolute maximum. |
| 2 | Source | passive | Source of the P-channel MOSFET; the drain-source voltage is rated -30 V (VDSS) absolute maximum, with VGS referenced to this pin. |
| 3 | Drain | passive | Drain of the P-channel MOSFET; the DC drain current is rated -2.0 A and the pulsed drain current -4.0 A absolute maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -30 | V | 2 | |||
| Gate-source voltage | VGSS | -25 | 20 | V | 2 | ||
| Drain current (DC) | ID | -2 | A | 2 | |||
| Drain current (pulsed) | IDP | -4 | A | 2 | |||
| Power dissipation | PD | 600 | mW | (Note 3) | 2 | ||
| Power dissipation | PD | 1200 | mW | t ≤ 1s (Note 1) | 2 | ||
| Channel temperature | Tch | 150 | °C | 2 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Gate leakage current | IGSS | -1 | 1 | µA | VGS = ±16 V | 3 | |
| Drain cut-off current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | ID = -1 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSX | -22 | V | ID = -1 mA, VGS = 8 V | 3 | ||
| Gate threshold voltage | Vth | -1 | -2.2 | V | VDS = VGS, ID = -0.25 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 198 | 274 | mΩ | ID = -0.5 A, VGS = -4.0 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 176 | 232 | mΩ | ID = -0.5 A, VGS = -4.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 125 | 150 | mΩ | ID = -2.0 A, VGS = -10 V | 3 | |
| Diode forward voltage | VDSF | 0.9 | 1.2 | V | ID = 2.0 A, VGS = 0 V | 3 |
CAD (KiCad official)
- Symbol:
SSM3J353F - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
ssm3j353f-etched.step/ssm3j353f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3j353f.step/ssm3j353f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
08bcdaa51097b3c2, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).