component
SSM3J352F
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SSM3J352F
TOSHIBA · MOSFETs · TO-236-3(SOT-23-3)
SSM3J352F from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±12 V (VGSS, absolute maximum). |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the gate-source voltage limit of ±12 V (VGSS) is referenced to this pin. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -20 V (VDSS) and DC drain current is rated -2 A (ID). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -20 | V | 2 | |||
| Gate-source voltage | VGSS | -12 | 12 | V | 2 | ||
| Drain current (DC) | ID | -2 | A | 2 | |||
| Drain current (pulsed) | IDP | -4 | A | Note 2: repetitive rating; pulse width limited by max channel temperature | 2 | ||
| Power dissipation | PD | 600 | mW | Note 3: device mounted on 25.4 mm x 25.4 mm x 1.6 mm FR4 board, Cu pad 645 mm2 | 2 | ||
| Power dissipation | PD | 1200 | mW | t ≤ 1 s | 2 | ||
| Channel temperature | Tch | 150 | °C | Note 1: ensure channel temperature does not exceed 150 °C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Gate leakage current | IGSS | -1 | 1 | µA | VDS = 0 V, VGS = ±10 V | 3 | |
| Drain cut-off current | IDSS | -1 | µA | VDS = -20 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | ID = -1 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (reverse gate bias mode) | V(BR)DSX | -12 | V | ID = -1 mA, VGS = 8 V | 3 | ||
| Gate threshold voltage | Vth | -0.5 | -1.2 | V | VDS = -3 V, ID = -1 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 210 | 443 | mΩ | ID = -0.4 A, VGS = -1.8 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 147 | 199 | mΩ | ID = -0.6 A, VGS = -2.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 108 | 136 | mΩ | ID = -2.0 A, VGS = -4.5 V | 3 | |
| Drain-source on-resistance | RDS(ON) | 90 | 110 | mΩ | ID = -2.0 A, VGS = -10 V | 3 | |
| Diode forward voltage | VDSF | 0.9 | 1.2 | V | ID = 2 A, VGS = 0 V | 4 | |
| Forward transfer admittance | /Yfs/ | 3.8 | S | VDS = -3 V, ID = -1 A | 3 | ||
| Input capacitance | Ciss | 210 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Reverse transfer capacitance | Crss | 31 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Output capacitance | Coss | 39 | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Switching time (turn-on time) | ton | 31 | ns | VDD = -10 V, ID = -1 A, VGS = 0 to -2.5 V, RG = 10 Ω | 3 | ||
| Switching time (turn-off time) | toff | 54 | ns | VDD = -10 V, ID = -1 A, VGS = 0 to -2.5 V, RG = 10 Ω | 3 | ||
| Total gate charge (gate-source plus gate-drain) | Qg | 5.1 | nC | VDD = -10 V, ID = -2.0 A, VGS = -4.5 V | 3 | ||
| Gate-source charge 1 | Qgs1 | 2.3 | nC | VDD = -10 V, ID = -2.0 A, VGS = -4.5 V | 3 | ||
| Gate-drain charge | Qgd | 1.5 | nC | VDD = -10 V, ID = -2.0 A, VGS = -4.5 V | 3 |
CAD (KiCad official)
- Symbol:
SSM3J352F - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files:
ssm3j352f-etched.step/ssm3j352f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3j352f.step/ssm3j352f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (8 pp, sha256
231b9c461b413dbd, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SSM3J352F
**TOSHIBA** · MOSFETs · TO-236-3(SOT-23-3)
SSM3J352F from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±12 V (VGSS, absolute maximum). |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the gate-source voltage limit of ±12 V (VGSS) is referenced to this pin. |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; drain-source voltage is rated -20 V (VDSS) and DC drain current is rated -2 A (ID). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-236-3(SOT-23-3) |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -20 | | | V | | 2 |
| Gate-source voltage | VGSS | -12 | | 12 | V | | 2 |
| Drain current (DC) | ID | -2 | | | A | | 2 |
| Drain current (pulsed) | IDP | -4 | | | A | Note 2: repetitive rating; pulse width limited by max channel temperature | 2 |
| Power dissipation | PD | | | 600 | mW | Note 3: device mounted on 25.4 mm x 25.4 mm x 1.6 mm FR4 board, Cu pad 645 mm2 | 2 |
| Power dissipation | PD | | | 1200 | mW | t ≤ 1 s | 2 |
| Channel temperature | Tch | | | 150 | °C | Note 1: ensure channel temperature does not exceed 150 °C | 2 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 2 |
| Gate leakage current | IGSS | -1 | | 1 | µA | VDS = 0 V, VGS = ±10 V | 3 |
| Drain cut-off current | IDSS | | | -1 | µA | VDS = -20 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | -20 | | | V | ID = -1 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage (reverse gate bias mode) | V(BR)DSX | -12 | | | V | ID = -1 mA, VGS = 8 V | 3 |
| Gate threshold voltage | Vth | -0.5 | | -1.2 | V | VDS = -3 V, ID = -1 mA | 3 |
| Drain-source on-resistance | RDS(ON) | | 210 | 443 | mΩ | ID = -0.4 A, VGS = -1.8 V | 3 |
| Drain-source on-resistance | RDS(ON) | | 147 | 199 | mΩ | ID = -0.6 A, VGS = -2.5 V | 3 |
| Drain-source on-resistance | RDS(ON) | | 108 | 136 | mΩ | ID = -2.0 A, VGS = -4.5 V | 3 |
| Drain-source on-resistance | RDS(ON) | | 90 | 110 | mΩ | ID = -2.0 A, VGS = -10 V | 3 |
| Diode forward voltage | VDSF | | 0.9 | 1.2 | V | ID = 2 A, VGS = 0 V | 4 |
| Forward transfer admittance | /Yfs/ | | 3.8 | | S | VDS = -3 V, ID = -1 A | 3 |
| Input capacitance | Ciss | | 210 | | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 3 |
| Reverse transfer capacitance | Crss | | 31 | | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 3 |
| Output capacitance | Coss | | 39 | | pF | VDS = -10 V, VGS = 0 V, f = 1 MHz | 3 |
| Switching time (turn-on time) | ton | | 31 | | ns | VDD = -10 V, ID = -1 A, VGS = 0 to -2.5 V, RG = 10 Ω | 3 |
| Switching time (turn-off time) | toff | | 54 | | ns | VDD = -10 V, ID = -1 A, VGS = 0 to -2.5 V, RG = 10 Ω | 3 |
| Total gate charge (gate-source plus gate-drain) | Qg | | 5.1 | | nC | VDD = -10 V, ID = -2.0 A, VGS = -4.5 V | 3 |
| Gate-source charge 1 | Qgs1 | | 2.3 | | nC | VDD = -10 V, ID = -2.0 A, VGS = -4.5 V | 3 |
| Gate-drain charge | Qgd | | 1.5 | | nC | VDD = -10 V, ID = -2.0 A, VGS = -4.5 V | 3 |
## CAD (KiCad official)
- Symbol: `SSM3J352F`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
- 3D model files: `ssm3j352f-etched.step` / `ssm3j352f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3j352f.step` / `ssm3j352f.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8597533303776169984) (8 pp, sha256 `231b9c461b413dbd`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ssm3j352f-datasheet.pdf)