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SSM3J352F

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SSM3J352F

TOSHIBA · MOSFETs · TO-236-3(SOT-23-3)

SSM3J352F from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±12 V (VGSS, absolute maximum).
2 Source passive Source terminal of the P-channel MOSFET; the gate-source voltage limit of ±12 V (VGSS) is referenced to this pin.
3 Drain passive Drain terminal of the P-channel MOSFET; drain-source voltage is rated -20 V (VDSS) and DC drain current is rated -2 A (ID).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-236-3(SOT-23-3)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS -20 V 2
Gate-source voltage VGSS -12 12 V 2
Drain current (DC) ID -2 A 2
Drain current (pulsed) IDP -4 A Note 2: repetitive rating; pulse width limited by max channel temperature 2
Power dissipation PD 600 mW Note 3: device mounted on 25.4 mm x 25.4 mm x 1.6 mm FR4 board, Cu pad 645 mm2 2
Power dissipation PD 1200 mW t ≤ 1 s 2
Channel temperature Tch 150 °C Note 1: ensure channel temperature does not exceed 150 °C 2
Storage temperature Tstg -55 150 °C 2
Gate leakage current IGSS -1 1 µA VDS = 0 V, VGS = ±10 V 3
Drain cut-off current IDSS -1 µA VDS = -20 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS -20 V ID = -1 mA, VGS = 0 V 3
Drain-source breakdown voltage (reverse gate bias mode) V(BR)DSX -12 V ID = -1 mA, VGS = 8 V 3
Gate threshold voltage Vth -0.5 -1.2 V VDS = -3 V, ID = -1 mA 3
Drain-source on-resistance RDS(ON) 210 443 mΩ ID = -0.4 A, VGS = -1.8 V 3
Drain-source on-resistance RDS(ON) 147 199 mΩ ID = -0.6 A, VGS = -2.5 V 3
Drain-source on-resistance RDS(ON) 108 136 mΩ ID = -2.0 A, VGS = -4.5 V 3
Drain-source on-resistance RDS(ON) 90 110 mΩ ID = -2.0 A, VGS = -10 V 3
Diode forward voltage VDSF 0.9 1.2 V ID = 2 A, VGS = 0 V 4
Forward transfer admittance /Yfs/ 3.8 S VDS = -3 V, ID = -1 A 3
Input capacitance Ciss 210 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 31 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 39 pF VDS = -10 V, VGS = 0 V, f = 1 MHz 3
Switching time (turn-on time) ton 31 ns VDD = -10 V, ID = -1 A, VGS = 0 to -2.5 V, RG = 10 Ω 3
Switching time (turn-off time) toff 54 ns VDD = -10 V, ID = -1 A, VGS = 0 to -2.5 V, RG = 10 Ω 3
Total gate charge (gate-source plus gate-drain) Qg 5.1 nC VDD = -10 V, ID = -2.0 A, VGS = -4.5 V 3
Gate-source charge 1 Qgs1 2.3 nC VDD = -10 V, ID = -2.0 A, VGS = -4.5 V 3
Gate-drain charge Qgd 1.5 nC VDD = -10 V, ID = -2.0 A, VGS = -4.5 V 3

CAD (KiCad official)

  • Symbol: SSM3J352F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: ssm3j352f-etched.step / ssm3j352f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3j352f.step / ssm3j352f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (8 pp, sha256 231b9c461b413dbd, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF