# SSM3J325F

**TOSHIBA** · MOSFETs · SOT-23

SSM3J325F from TOSHIBA, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated VGSS = ±8 V (absolute maximum). |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the drain-source voltage is rated VDSS = -20 V (absolute maximum). |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the DC drain current is rated ID = -2.0 A and the pulsed drain current IDP = -4.0 A (absolute maximum, Note 1). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | -20 | V |  | 1 |
| Gate-source voltage | VGSS | -8 |  | 8 | V |  | 1 |
| Drain current DC | ID |  |  | -2 | A | DC, Note 1 | 1 |
| Drain current pulse | IDP |  |  | -4 | A | Pulse, Note 1 | 1 |
| Power dissipation | PD |  |  | 600 | mW | Note 2, mounted on FR4 board | 1 |
| Power dissipation | PD |  |  | 1200 | mW | t = 1s, Note 2 | 1 |
| Channel temperature | Tch |  |  | 150 | °C |  | 1 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 1 |
| Drain-source breakdown voltage | V(BR)DSS | -20 |  |  | V | ID = -1 mA, VGS = 0 V | 2 |
| Drain-source breakdown voltage | V(BR)DSX | -15 |  |  | V | ID = -1 mA, VGS = 5 V (Note 4) | 2 |
| Drain cut-off current | IDSS |  |  | -1 | μA | VDS = -20 V, VGS = 0 V | 2 |
| Gate leakage current | IGSS | -1 |  | 1 | μA | VGS = ±8 V, VDS = 0 V | 2 |
| Gate threshold voltage | Vth | -0.3 |  | -1 | V | VDS = -3 V, ID = -1 mA | 2 |
| Forward transfer admittance | /Yfs/ | 2.2 | 4.4 |  | S | VDS = -3 V, ID = -1.0 A (Note 3) | 2 |
| Drain-source ON-resistance | RDS(ON) |  | 123 | 150 | mΩ | ID = -1.0 A, VGS = -4.5 V (Note 3) | 2 |
| Drain-source ON-resistance | RDS(ON) |  | 143 | 179 | mΩ | ID = -0.6 A, VGS = -2.5 V (Note 3) | 2 |
| Drain-source ON-resistance | RDS(ON) |  | 170 | 231 | mΩ | ID = -0.4 A, VGS = -1.8 V (Note 3) | 2 |
| Drain-source ON-resistance | RDS(ON) |  | 192 | 311 | mΩ | ID = -0.2 A, VGS = -1.5 V (Note 3) | 2 |
| Drain-source forward voltage | VDSF |  | 0.97 | 1.2 | V | ID = 2.0 A, VGS = 0 V (Note 3) | 2 |

## CAD (KiCad official)

- Symbol: `SSM3J325F`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ssm3j325f-etched.step` / `ssm3j325f-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ssm3j325f.step` / `ssm3j325f.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586188410688319488) (6 pp, sha256 `860e1a016d7c1b75`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ssm3j325f-datasheet.pdf)