component
SSM3J325F
Public Made by Adomby adom
TOSHIBA MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSSM3J325F
TOSHIBA · MOSFETs · SOT-23
SSM3J325F from TOSHIBA, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated VGSS = ±8 V (absolute maximum). |
| 2 | Source | passive | Source terminal of the P-channel MOSFET; the drain-source voltage is rated VDSS = -20 V (absolute maximum). |
| 3 | Drain | passive | Drain terminal of the P-channel MOSFET; the DC drain current is rated ID = -2.0 A and the pulsed drain current IDP = -4.0 A (absolute maximum, Note 1). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -20 | V | 1 | |||
| Gate-source voltage | VGSS | -8 | 8 | V | 1 | ||
| Drain current DC | ID | -2 | A | DC, Note 1 | 1 | ||
| Drain current pulse | IDP | -4 | A | Pulse, Note 1 | 1 | ||
| Power dissipation | PD | 600 | mW | Note 2, mounted on FR4 board | 1 | ||
| Power dissipation | PD | 1200 | mW | t = 1s, Note 2 | 1 | ||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | ID = -1 mA, VGS = 0 V | 2 | ||
| Drain-source breakdown voltage | V(BR)DSX | -15 | V | ID = -1 mA, VGS = 5 V (Note 4) | 2 | ||
| Drain cut-off current | IDSS | -1 | μA | VDS = -20 V, VGS = 0 V | 2 | ||
| Gate leakage current | IGSS | -1 | 1 | μA | VGS = ±8 V, VDS = 0 V | 2 | |
| Gate threshold voltage | Vth | -0.3 | -1 | V | VDS = -3 V, ID = -1 mA | 2 | |
| Forward transfer admittance | /Yfs/ | 2.2 | 4.4 | S | VDS = -3 V, ID = -1.0 A (Note 3) | 2 | |
| Drain-source ON-resistance | RDS(ON) | 123 | 150 | mΩ | ID = -1.0 A, VGS = -4.5 V (Note 3) | 2 | |
| Drain-source ON-resistance | RDS(ON) | 143 | 179 | mΩ | ID = -0.6 A, VGS = -2.5 V (Note 3) | 2 | |
| Drain-source ON-resistance | RDS(ON) | 170 | 231 | mΩ | ID = -0.4 A, VGS = -1.8 V (Note 3) | 2 | |
| Drain-source ON-resistance | RDS(ON) | 192 | 311 | mΩ | ID = -0.2 A, VGS = -1.5 V (Note 3) | 2 | |
| Drain-source forward voltage | VDSF | 0.97 | 1.2 | V | ID = 2.0 A, VGS = 0 V (Note 3) | 2 |
CAD (KiCad official)
- Symbol:
SSM3J325F - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ssm3j325f-etched.step/ssm3j325f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ssm3j325f.step/ssm3j325f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (6 pp, sha256
860e1a016d7c1b75, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).