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SSM3J15F

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SSM3J15F

TOSHIBA · MOSFETs · TO-236-3(SOT-23-3)

SSM3J15F from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the P-channel MOSFET, with a gate-source voltage rating of ±20 V and a threshold voltage Vth of −1.1 to −1.7 V (VDS = −3 V, ID = −0.1 mA).
2 Source passive Source of the P-channel MOSFET, the common reference for the gate drive and the switching test circuit.
3 Drain passive Drain of the P-channel MOSFET, with a drain-source voltage rating of −30 V and a DC drain current of −100 mA (−200 mA pulsed).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-236-3(SOT-23-3)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source voltage VDS -30 V Ta = 25°C 1
Gate-Source voltage VGSS -20 20 V Ta = 25°C 1
Drain current DC ID -100 mA Ta = 25°C 1
Drain current pulse IDP -200 mA Ta = 25°C 1
Drain power dissipation PD 200 mW Ta = 25°C 1
Channel temperature Tch 150 °C 1
Storage temperature range Tstg -55 150 °C 1
Gate leakage current IGSS -1 1 μA VGS = ±16 V, VDS = 0 2
Drain-Source breakdown voltage V(BR)DSS -30 V ID = −0.1 mA, VGS = 0 2
Drain cut-off current IDSS -1 μA VDS = −30 V, VGS = 0 2
Gate threshold voltage Vth -1.1 -1.7 V VDS = −3 V, ID = −0.1 mA 2
Forward transfer admittance /Yfs/ 20 mS VDS = −3 V, ID = −10 mA 2
Drain-Source ON resistance RDS(ON) 8 12 Ω ID = −10 mA, VGS = −4 V 2
Drain-Source ON resistance RDS(ON) 14 32 Ω ID = −1 mA, VGS = −2.5 V 2
Input capacitance Ciss 9.1 pF VDS = −3 V, VGS = 0, f = 1 MHz 2
Reverse transfer capacitance Crss 3.5 pF VDS = −3 V, VGS = 0, f = 1 MHz 2
Output capacitance Coss 8.6 pF VDS = −3 V, VGS = 0, f = 1 MHz 2
Turn-on time ton 65 ns VDD = −5 V, ID = −10 mA, VGS = 0 to −5 V 2
Turn-off time toff 175 ns VDD = −5 V, ID = −10 mA, VGS = 0 to −5 V 2

CAD (KiCad official)

  • Symbol: SSM3J15F
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: ssm3j15f-etched.step / ssm3j15f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3j15f.step / ssm3j15f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (5 pp, sha256 c69fdc5aed94ee1e, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF