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Generated by kicad-footprint-generator · KiCad file format 20260206

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SSM3J15F

TOSHIBA · MOSFETs · TO-236-3(SOT-23-3)

SSM3J15F from TOSHIBA, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate of the P-channel MOSFET, with a gate-source voltage rating of ±20 V and a threshold voltage Vth of −1.1 to −1.7 V (VDS = −3 V, ID = −0.1 mA).
2	Source	passive	Source of the P-channel MOSFET, the common reference for the gate drive and the switching test circuit.
3	Drain	passive	Drain of the P-channel MOSFET, with a drain-source voltage rating of −30 V and a DC drain current of −100 mA (−200 mA pulsed).

Key specifications

Parameter	Value
Manufacturer	TOSHIBA
Package	TO-236-3(SOT-23-3)
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source voltage	VDS			-30	V	Ta = 25°C	1
Gate-Source voltage	VGSS	-20		20	V	Ta = 25°C	1
Drain current DC	ID			-100	mA	Ta = 25°C	1
Drain current pulse	IDP			-200	mA	Ta = 25°C	1
Drain power dissipation	PD			200	mW	Ta = 25°C	1
Channel temperature	Tch			150	°C		1
Storage temperature range	Tstg	-55		150	°C		1
Gate leakage current	IGSS	-1		1	μA	VGS = ±16 V, VDS = 0	2
Drain-Source breakdown voltage	V(BR)DSS	-30			V	ID = −0.1 mA, VGS = 0	2
Drain cut-off current	IDSS			-1	μA	VDS = −30 V, VGS = 0	2
Gate threshold voltage	Vth	-1.1		-1.7	V	VDS = −3 V, ID = −0.1 mA	2
Forward transfer admittance	/Yfs/	20			mS	VDS = −3 V, ID = −10 mA	2
Drain-Source ON resistance	RDS(ON)		8	12	Ω	ID = −10 mA, VGS = −4 V	2
Drain-Source ON resistance	RDS(ON)		14	32	Ω	ID = −1 mA, VGS = −2.5 V	2
Input capacitance	Ciss		9.1		pF	VDS = −3 V, VGS = 0, f = 1 MHz	2
Reverse transfer capacitance	Crss		3.5		pF	VDS = −3 V, VGS = 0, f = 1 MHz	2
Output capacitance	Coss		8.6		pF	VDS = −3 V, VGS = 0, f = 1 MHz	2
Turn-on time	ton		65		ns	VDD = −5 V, ID = −10 mA, VGS = 0 to −5 V	2
Turn-off time	toff		175		ns	VDD = −5 V, ID = −10 mA, VGS = 0 to −5 V	2

CAD (KiCad official)

Symbol: SSM3J15F
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
3D model files: ssm3j15f-etched.step / ssm3j15f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ssm3j15f.step / ssm3j15f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: TOSHIBA datasheet (5 pp, sha256 c69fdc5aed94ee1e, retrieved 2026-10-22, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF