# SS8050W

**TWGMC** · Bipolar (BJT) · SOT-323

SS8050W from TWGMC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | BASE terminal of the SS8050W NPN transistor; the datasheet gives no separate base limit, and the base is tested with VEB = 5 V (ICBO/IEBO max 0.1 μA). |
| 2 | EMITTER | passive | EMITTER terminal of the SS8050W NPN transistor, with absolute maximum emitter-base voltage VEBO of 5 V. |
| 3 | COLLECTOR | passive | COLLECTOR terminal of the SS8050W NPN transistor, rated for 1.5 A continuous collector current (IC), 25 V collector-emitter voltage (VCEO) and 0.2 W collector power dissipation (PC). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TWGMC |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO |  |  | 40 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 25 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 5 | V |  | 1 |
| Collector Current -Continuous | IC |  |  | 1.5 | A |  | 1 |
| Collector Power Dissipation | PC |  |  | 0.2 | W |  | 1 |
| Junction Temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 40 |  |  | V | IC= 100μA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 25 |  |  | V | IC= 0.1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=100μA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 0.1 | μA | VCB=40V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 0.1 | μA | VEB= 5V, IC=0 | 1 |
| DC current gain hFE(1) | hFE(1) | 120 |  | 400 |  | VCE=1V, IC= 100mA | 1 |
| DC current gain hFE(2) | hFE(2) | 40 |  |  |  | VCE=1V, IC= 800mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.5 | V | IC=800mA, IB= 80mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.2 | V | IC=800mA, IB= 80mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=10V, IC= 50mA, f=30MHz | 1 |

## CAD (KiCad official)

- Symbol: `SS8050W`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `ss8050w-etched.step` / `ss8050w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ss8050w.step` / `ss8050w.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TWGMC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590891369667764224) (3 pp, sha256 `5e9c149124c71fda`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ss8050w-datasheet.pdf)