component

SS8050W

Public Made by Adom

by adom

TWGMC Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 24d ago
viewers ss8050w: viewers · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
page.json ss8050w: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 17d ago
README.md ss8050w: specified limits as data (metadata.characteristics, 17 rows from the datasheet) · Ray 17d ago
ss8050w-etched.glb ss8050w: factory component page (tier=lcsc) · Ray 24d ago
ss8050w-etched.step ss8050w: factory component page (tier=lcsc) · Ray 24d ago
ss8050w-hero.glb ss8050w: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
ss8050w-hero.overlay.json Publish 0.1.0 · Ray 24d ago
ss8050w.glb Publish 0.1.0 · Ray 24d ago
ss8050w.kicad_mod Publish 0.1.0 · Ray 24d ago
ss8050w.kicad_sym Publish 0.1.0 · Ray 24d ago
ss8050w.lbr Publish 0.1.0 · Ray 24d ago
ss8050w.step Publish 0.1.0 · Ray 24d ago

SS8050W

TWGMC · Bipolar (BJT) · SOT-323

SS8050W from TWGMC, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive BASE terminal of the SS8050W NPN transistor; the datasheet gives no separate base limit, and the base is tested with VEB = 5 V (ICBO/IEBO max 0.1 μA).
2 EMITTER passive EMITTER terminal of the SS8050W NPN transistor, with absolute maximum emitter-base voltage VEBO of 5 V.
3 COLLECTOR passive COLLECTOR terminal of the SS8050W NPN transistor, rated for 1.5 A continuous collector current (IC), 25 V collector-emitter voltage (VCEO) and 0.2 W collector power dissipation (PC).

Key specifications

Parameter Value
Manufacturer TWGMC
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 40 V 1
Collector-Emitter Voltage VCEO 25 V 1
Emitter-Base Voltage VEBO 5 V 1
Collector Current -Continuous IC 1.5 A 1
Collector Power Dissipation PC 0.2 W 1
Junction Temperature Tj 150 ℃ 1
Storage Temperature Tstg -55 150 ℃ 1
Collector-base breakdown voltage V(BR)CBO 40 V IC= 100μA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 25 V IC= 0.1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE=100μA, IC=0 1
Collector cut-off current ICBO 0.1 μA VCB=40V, IE=0 1
Emitter cut-off current IEBO 0.1 μA VEB= 5V, IC=0 1
DC current gain hFE(1) hFE(1) 120 400 VCE=1V, IC= 100mA 1
DC current gain hFE(2) hFE(2) 40 VCE=1V, IC= 800mA 1
Collector-emitter saturation voltage VCE(sat) 0.5 V IC=800mA, IB= 80mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC=800mA, IB= 80mA 1
Transition frequency fT 100 MHz VCE=10V, IC= 50mA, f=30MHz 1

CAD (KiCad official)

  • Symbol: SS8050W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: ss8050w-etched.step / ss8050w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ss8050w.step / ss8050w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TWGMC datasheet (3 pp, sha256 5e9c149124c71fda, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF