# SQD40N06-14L_GE3

**Vishay Intertech** · MOSFETs · TO-252

SQD40N06-14L_GE3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of 1.5 to 2.5 V. |
| 2 | D | passive | Drain, connected internally to the tab, rated for VDS of 60 V and continuous drain current of 40 A at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET, carrying up to 40 A continuous source (diode conduction) current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 |  |  | V | VGS = 0, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS |  |  | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VGS = 0 V, VDS = 60 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 30 |  |  | A | VGS = 10 V, VDS ≥ 5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.011 | 0.014 | Ω | VGS = 10 V, ID = 20 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.024 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.029 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.014 | 0.017 | Ω | VGS = 4.5 V, ID = 20 A, TJ = 25 °C | 2 |
| Input Capacitance | Ciss |  | 1685 | 2105 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 305 | 385 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 180 | 225 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg |  | 34 | 51 | nC | VGS = 10 V, VDS = 30 V, ID = 40 A | 2 |
| Gate-Drain Charge | Qgd |  | 8.5 | 13 | nC | VGS = 10 V, VDS = 30 V, ID = 40 A | 2 |
| Gate Resistance | Rg | 0.8 | 1.7 | 3.7 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 8 | 12 | ns | VDD = 30 V, RL = 0.75 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 13 | 20 | ns | VDD = 30 V, RL = 0.75 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 22 | 33 | ns | VDD = 30 V, RL = 0.75 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 9 | 14 | ns | VDD = 30 V, RL = 0.75 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Pulsed Source Current | ISM |  |  | 160 | A |  | 2 |
| Diode Forward Voltage | VSD |  | 0.85 | 1.2 | V | IF = 20 A, VGS = 0 | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 40 | A | TC = 25 °C, package limited | 1 |
| Continuous Drain Current | ID |  |  | 29 | A | TC = 125 °C | 1 |
| Continuous Source Current (Diode Conduction) | IS |  |  | 40 | A | TC = 25 °C, package limited | 1 |
| Pulsed Drain Current | IDM |  |  | 160 | A | TC = 25 °C | 1 |
| Single Pulse Avalanche Current | IAS |  |  | 32 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 51 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 75 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 25 | W | TC = 125 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA |  |  | 60 | °C/W | PCB mount, 1" square PCB (FR4) | 1 |
| Junction-to-Case (Drain) Thermal Resistance | RthJC |  |  | 2 | °C/W |  | 1 |
| Forward Transconductance | gfs |  | 52 |  | S | VDS = 15 V, ID = 20 A | 2 |

## CAD (KiCad official)

- Symbol: `SQD40N06-14L_GE3`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sqd40n06-14l-ge3-etched.step` / `sqd40n06-14l-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sqd40n06-14l-ge3.step` / `sqd40n06-14l-ge3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Vishay Intertech datasheet](https://www.vishay.com/docs/67002/sqd40n06-14l.pdf) (10 pp, sha256 `4317f7250cc1feef`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sqd40n06-14l-ge3-datasheet.pdf)