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SQD40N06-14L_GE3
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Vishay Intertech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQD40N06-14L_GE3
Vishay Intertech · MOSFETs · TO-252
SQD40N06-14L_GE3 from Vishay Intertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of 1.5 to 2.5 V. |
| 2 | D | passive | Drain, connected internally to the tab, rated for VDS of 60 V and continuous drain current of 40 A at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET, carrying up to 40 A continuous source (diode conduction) current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 60 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.011 | 0.014 | Ω | VGS = 10 V, ID = 20 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.024 | Ω | VGS = 10 V, ID = 20 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.029 | Ω | VGS = 10 V, ID = 20 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.014 | 0.017 | Ω | VGS = 4.5 V, ID = 20 A, TJ = 25 °C | 2 | |
| Input Capacitance | Ciss | 1685 | 2105 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 305 | 385 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 180 | 225 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 34 | 51 | nC | VGS = 10 V, VDS = 30 V, ID = 40 A | 2 | |
| Gate-Drain Charge | Qgd | 8.5 | 13 | nC | VGS = 10 V, VDS = 30 V, ID = 40 A | 2 | |
| Gate Resistance | Rg | 0.8 | 1.7 | 3.7 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 8 | 12 | ns | VDD = 30 V, RL = 0.75 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 13 | 20 | ns | VDD = 30 V, RL = 0.75 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 22 | 33 | ns | VDD = 30 V, RL = 0.75 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 9 | 14 | ns | VDD = 30 V, RL = 0.75 Ω, ID ≅ 40 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed Source Current | ISM | 160 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.85 | 1.2 | V | IF = 20 A, VGS = 0 | 2 | |
| Drain-Source Voltage | VDS | 60 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 40 | A | TC = 25 °C, package limited | 1 | ||
| Continuous Drain Current | ID | 29 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 40 | A | TC = 25 °C, package limited | 1 | ||
| Pulsed Drain Current | IDM | 160 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Current | IAS | 32 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 51 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 75 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 25 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 60 | °C/W | PCB mount, 1" square PCB (FR4) | 1 | ||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 2 | °C/W | 1 | |||
| Forward Transconductance | gfs | 52 | S | VDS = 15 V, ID = 20 A | 2 |
CAD (KiCad official)
- Symbol:
SQD40N06-14L_GE3 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sqd40n06-14l-ge3-etched.step/sqd40n06-14l-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sqd40n06-14l-ge3.step/sqd40n06-14l-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
4317f7250cc1feef, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).