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SQ4917EY-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQ4917EY-T1_GE3
Vishay Intertech · MOSFETs · SO-8
SQ4917EY-T1_GE3 from Vishay Intertech, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1 in the dual SO-8 package, rated for the device's -60 V VDS and ±20 V VGS limits. |
| 2 | G1 | input | Gate of P-channel MOSFET 1, with VGS limited to ±20 V per the absolute maximum ratings. |
| 3 | S2 | passive | Source of P-channel MOSFET 2 in the dual SO-8 package, rated for the device's -60 V VDS and ±20 V VGS limits. |
| 4 | G2 | input | Gate of P-channel MOSFET 2, with VGS limited to ±20 V per the absolute maximum ratings. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2, with VDS rated at -60 V and continuous drain current of -8 A per leg (TC = 25 °C). |
| 6 | D2 | passive | Drain of P-channel MOSFET 2 (second drain lead of the same die), with VDS rated at -60 V and continuous drain current of -8 A per leg (TC = 25 °C). |
| 7 | D1 | passive | Drain of P-channel MOSFET 1 (second drain lead of the same die), with VDS rated at -60 V and continuous drain current of -8 A per leg (TC = 25 °C). |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, with VDS rated at -60 V and continuous drain current of -8 A per leg (TC = 25 °C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1.5 | -2 | -2.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS = 0 V, VDS = -60 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -50 | μA | VGS = 0 V, VDS = -60 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -150 | μA | VGS = 0 V, VDS = -60 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VGS = -10 V, VDS ≤ -5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.04 | 0.048 | Ω | VGS = -10 V, ID = -4.3 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.078 | Ω | VGS = -10 V, ID = -4.3 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.096 | Ω | VGS = -10 V, ID = -4.3 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.051 | 0.0612 | Ω | VGS = -4.5 V, ID = -3.8 A | 2 | |
| Input Capacitance | Ciss | 1530 | 1910 | pF | VGS = 0 V, VDS = -30 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 334 | 417 | pF | VGS = 0 V, VDS = -30 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 114 | 142 | pF | VGS = 0 V, VDS = -30 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 43.4 | 65 | nC | VGS = -10 V, VDS = -30 V, ID = -5 A | 2 | |
| Gate Resistance | Rg | 1.3 | 2.5 | 4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 11 | 17 | ns | VDD = -30 V, RL = 8.8 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 11 | 17 | ns | VDD = -30 V, RL = 8.8 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 35 | 52 | ns | VDD = -30 V, RL = 8.8 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Pulsed Current | ISM | -32 | A | 2 | |||
| Forward Voltage | VSD | -0.8 | -1.2 | V | IF = -2.8 A, VGS = 0 V | 2 | |
| Drain-Source Voltage | VDS | -60 | V | TC = 25 °C unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -8 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -4.75 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | -4.5 | A | 1 | |||
| Pulsed Drain Current | IDM | -32 | A | Pulse width ≤ 300 μs, duty cycle ≤ 2 % | 1 | ||
| Single Pulse Avalanche Current | IAS | -22.4 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 25 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.67 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient PCB Mount | RthJA | 110 | °C/W | PCB mount, 1" square PCB (FR-4 material) | 1 | ||
| Junction-to-Foot (Drain) | RthJF | 30 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SQ4917EY-T1_GE3 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
sq4917ey-t1-ge3-etched.step/sq4917ey-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq4917ey-t1-ge3.step/sq4917ey-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (10 pp, sha256
90b7cd3a7cabed3e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).