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SQ3495EV-T1_GE3

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Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SQ3495EV-T1_GE3

Vishay Intertech · MOSFETs · TSOP-6

SQ3495EV-T1_GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is -30 V and the continuous drain current ID is -8 A at TC = 25 °C.
2 D passive Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is -30 V and the continuous drain current ID is -8 A at TC = 25 °C.
3 G input Gate terminal of the P-channel MOSFET; the gate-source voltage VGS is rated at ±12 V.
4 S passive Source terminal of the P-channel MOSFET; the continuous source (diode conduction) current IS is -4.5 A.
5 D passive Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is -30 V and the continuous drain current ID is -8 A at TC = 25 °C.
6 D passive Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is -30 V and the continuous drain current ID is -8 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -30 V 1
Gate-source voltage VGS -12 12 V 1
Continuous drain current ID -8 A TC = 25 °C 1
Continuous drain current ID -7 A TC = 125 °C 1
Continuous source current (diode conduction) IS -4.5 A 1
Pulsed drain current IDM -32 A 1
Single pulse avalanche current IAS -19.5 A L = 0.1 mH 1
Single pulse avalanche energy EAS 19 mJ 1
Maximum power dissipation PD 5 W TC = 25 °C 1
Maximum power dissipation PD 1.6 W TC = 125 °C 1
Operating junction and storage temperature range TJ, Tstg -55 175 °C 1
Junction-to-ambient thermal resistance RthJA 110 °C/W PCB mount 1
Junction-to-foot (drain) thermal resistance RthJF 30 °C/W 1
Drain-source breakdown voltage VDS -30 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -0.6 -1 -1.4 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero gate voltage drain current IDSS -1 μA VGS = 0 V VDS = -30 V 2
Zero gate voltage drain current IDSS -50 μA VGS = 0 V VDS = -30 V, TJ = 125 °C 2
Zero gate voltage drain current IDSS -150 μA VGS = 0 V VDS = -30 V, TJ = 175 °C 2
On-state drain current ID(on) -10 A VGS = -10 V VDS = -5 V 2
Drain-source on-state resistance RDS(on) 0.017 0.021 Ω VGS = -4.5 V ID = -5 A 2
Drain-source on-state resistance RDS(on) 0.03 Ω VGS = -4.5 V ID = -5 A, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 0.034 Ω VGS = -4.5 V ID = -5 A, TJ = 175 °C 2
Drain-source on-state resistance RDS(on) 0.027 0.034 Ω VGS = -2.5 V ID = -4 A 2
Input capacitance Ciss 3032 3950 pF VGS = 0 V VDS = -20 V, f = 1 MHz 2
Output capacitance Coss 220 285 pF VGS = 0 V VDS = -20 V, f = 1 MHz 2
Reverse transfer capacitance Crss 217 285 pF VGS = 0 V VDS = -20 V, f = 1 MHz 2
Total gate charge Qg 29 41 nC VGS = -4.5 V VDS = -15 V, ID = -7.9 A 2
Gate resistance Rg 2.2 5.6 9 Ω f = 1 MHz 2
Turn-on delay time td(on) 20 28 ns VDD = -15 V, RL = 1.9 Ω, ID ≅ -7.9 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise time tr 51 72 ns VDD = -15 V, RL = 1.9 Ω, ID ≅ -7.9 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-off delay time td(off) 71 100 ns VDD = -15 V, RL = 1.9 Ω, ID ≅ -7.9 A, VGEN = -4.5 V, Rg = 1 Ω 2
Fall time tf 68 96 ns VDD = -15 V, RL = 1.9 Ω, ID ≅ -7.9 A, VGEN = -4.5 V, Rg = 1 Ω 2
Pulsed current ISM -32 A 2
Forward voltage VSD -0.8 -1.2 V IF = -5 A, VGS = 0 V 2

CAD (KiCad official)

  • Symbol: SQ3495EV-T1_GE3
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: sq3495ev-t1-ge3-etched.step / sq3495ev-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq3495ev-t1-ge3.step / sq3495ev-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 d6bad790dba075da, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF