component
SQ3495EV-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSQ3495EV-T1_GE3
Vishay Intertech · MOSFETs · TSOP-6
SQ3495EV-T1_GE3 from Vishay Intertech, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is -30 V and the continuous drain current ID is -8 A at TC = 25 °C. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is -30 V and the continuous drain current ID is -8 A at TC = 25 °C. |
| 3 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage VGS is rated at ±12 V. |
| 4 | S | passive | Source terminal of the P-channel MOSFET; the continuous source (diode conduction) current IS is -4.5 A. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is -30 V and the continuous drain current ID is -8 A at TC = 25 °C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the drain-source voltage VDS is -30 V and the continuous drain current ID is -8 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -30 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous drain current | ID | -8 | A | TC = 25 °C | 1 | ||
| Continuous drain current | ID | -7 | A | TC = 125 °C | 1 | ||
| Continuous source current (diode conduction) | IS | -4.5 | A | 1 | |||
| Pulsed drain current | IDM | -32 | A | 1 | |||
| Single pulse avalanche current | IAS | -19.5 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 19 | mJ | 1 | |||
| Maximum power dissipation | PD | 5 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 1.6 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-ambient thermal resistance | RthJA | 110 | °C/W | PCB mount | 1 | ||
| Junction-to-foot (drain) thermal resistance | RthJF | 30 | °C/W | 1 | |||
| Drain-source breakdown voltage | VDS | -30 | V | VGS = 0 V, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -0.6 | -1 | -1.4 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | μA | VGS = 0 V VDS = -30 V | 2 | ||
| Zero gate voltage drain current | IDSS | -50 | μA | VGS = 0 V VDS = -30 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current | IDSS | -150 | μA | VGS = 0 V VDS = -30 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | -10 | A | VGS = -10 V VDS = -5 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.017 | 0.021 | Ω | VGS = -4.5 V ID = -5 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.03 | Ω | VGS = -4.5 V ID = -5 A, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.034 | Ω | VGS = -4.5 V ID = -5 A, TJ = 175 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.027 | 0.034 | Ω | VGS = -2.5 V ID = -4 A | 2 | |
| Input capacitance | Ciss | 3032 | 3950 | pF | VGS = 0 V VDS = -20 V, f = 1 MHz | 2 | |
| Output capacitance | Coss | 220 | 285 | pF | VGS = 0 V VDS = -20 V, f = 1 MHz | 2 | |
| Reverse transfer capacitance | Crss | 217 | 285 | pF | VGS = 0 V VDS = -20 V, f = 1 MHz | 2 | |
| Total gate charge | Qg | 29 | 41 | nC | VGS = -4.5 V VDS = -15 V, ID = -7.9 A | 2 | |
| Gate resistance | Rg | 2.2 | 5.6 | 9 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 20 | 28 | ns | VDD = -15 V, RL = 1.9 Ω, ID ≅ -7.9 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 51 | 72 | ns | VDD = -15 V, RL = 1.9 Ω, ID ≅ -7.9 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 71 | 100 | ns | VDD = -15 V, RL = 1.9 Ω, ID ≅ -7.9 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 68 | 96 | ns | VDD = -15 V, RL = 1.9 Ω, ID ≅ -7.9 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Pulsed current | ISM | -32 | A | 2 | |||
| Forward voltage | VSD | -0.8 | -1.2 | V | IF = -5 A, VGS = 0 V | 2 |
CAD (KiCad official)
- Symbol:
SQ3495EV-T1_GE3 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
sq3495ev-t1-ge3-etched.step/sq3495ev-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq3495ev-t1-ge3.step/sq3495ev-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (8 pp, sha256
d6bad790dba075da, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).