component
SQ2351ES-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SQ2351ES-T1_GE3
Vishay Intertech · MOSFETs · SOT-23
SQ2351ES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated VGS ±12 V (absolute maximum). |
| 2 | S | passive | Source of the MOSFET; continuous source current (diode conduction) is rated IS -2.5 A. |
| 3 | D | passive | Drain of the MOSFET; drain-source voltage is rated VDS -20 V and continuous drain current is rated ID -3.2 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -20 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous drain current | ID | -3.2 | A | TC = 25 °C | 1 | ||
| Continuous drain current | ID | -1.8 | A | TC = 125 °C | 1 | ||
| Continuous source current (diode conduction) | IS | -2.5 | A | 1 | |||
| Pulsed drain current | IDM | -12.7 | A | 1 | |||
| Single pulse avalanche current | IAS | -6 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 1.8 | mJ | 1 | |||
| Maximum power dissipation | PD | 2 | W | TC = 25 °C | 1 | ||
| Maximum power dissipation | PD | 0.67 | W | TC = 125 °C | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-ambient thermal resistance | RthJA | 175 | °C/W | PCB mount | 1 | ||
| Junction-to-foot (drain) thermal resistance | RthJF | 75 | °C/W | 1 | |||
| Drain-source breakdown voltage | VDS | -20 | V | VGS = 0, ID = -250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | -0.6 | -1 | -1.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| Zero gate voltage drain current | IDSS | -1 | μA | VGS = 0 V, VDS = -20 V | 2 | ||
| Zero gate voltage drain current | IDSS | -50 | μA | VGS = 0 V, VDS = -20 V, TJ = 125 °C | 2 | ||
| Zero gate voltage drain current | IDSS | -150 | μA | VGS = 0 V, VDS = -20 V, TJ = 175 °C | 2 | ||
| On-state drain current | ID(on) | -8 | A | VGS = -4.5 V, VDS 5 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.08 | 0.115 | Ω | VGS = -4.5 V, ID = -2.4 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.168 | Ω | VGS = -4.5 V, ID = -2.4 A, TJ = 125 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.196 | Ω | VGS = -4.5 V, ID = -2.4 A, TJ = 175 °C | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.15 | 0.205 | Ω | VGS = -2.5 V, ID = -1.8 A | 2 | |
| Input capacitance | Ciss | 265 | 330 | pF | VGS = 0 V, VDS = -10 V, f = 1 MHz | 2 | |
| Output capacitance | Coss | 75 | 94 | pF | VGS = 0 V, VDS = -10 V, f = 1 MHz | 2 | |
| Reverse transfer capacitance | Crss | 50 | 63 | pF | VGS = 0 V, VDS = -10 V, f = 1 MHz | 2 | |
| Total gate charge | Qg | 3.4 | 5.5 | nC | VGS = -4.5 V, VDS = -10 V, ID = -2.4 A | 2 | |
| Gate resistance | Rg | 4.8 | 9.6 | 14.4 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | 20 | 30 | ns | VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Rise time | tr | 18 | 27 | ns | VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Turn-off delay time | td(off) | 19 | 28 | ns | VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Fall time | tf | 8 | 12 | ns | VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 | 2 | |
| Pulsed current (source-drain diode) | ISM | -12.7 | A | 2 | |||
| Forward voltage (source-drain diode) | VSD | -0.8 | -1.2 | V | IF = -2 A, VGS = 0 | 2 |
CAD (KiCad official)
- Symbol:
SQ2351ES-T1_GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sq2351es-t1-ge3-etched.step/sq2351es-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2351es-t1-ge3.step/sq2351es-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (9 pp, sha256
fa37e544d45db6ea, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SQ2351ES-T1_GE3
**Vishay Intertech** · MOSFETs · SOT-23
SQ2351ES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated VGS ±12 V (absolute maximum). |
| 2 | S | passive | Source of the MOSFET; continuous source current (diode conduction) is rated IS -2.5 A. |
| 3 | D | passive | Drain of the MOSFET; drain-source voltage is rated VDS -20 V and continuous drain current is rated ID -3.2 A at TC = 25 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | -20 | | | V | | 1 |
| Gate-source voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous drain current | ID | -3.2 | | | A | TC = 25 °C | 1 |
| Continuous drain current | ID | -1.8 | | | A | TC = 125 °C | 1 |
| Continuous source current (diode conduction) | IS | -2.5 | | | A | | 1 |
| Pulsed drain current | IDM | -12.7 | | | A | | 1 |
| Single pulse avalanche current | IAS | -6 | | | A | L = 0.1 mH | 1 |
| Single pulse avalanche energy | EAS | | | 1.8 | mJ | | 1 |
| Maximum power dissipation | PD | | | 2 | W | TC = 25 °C | 1 |
| Maximum power dissipation | PD | | | 0.67 | W | TC = 125 °C | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-ambient thermal resistance | RthJA | | | 175 | °C/W | PCB mount | 1 |
| Junction-to-foot (drain) thermal resistance | RthJF | | | 75 | °C/W | | 1 |
| Drain-source breakdown voltage | VDS | -20 | | | V | VGS = 0, ID = -250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | -0.6 | -1 | -1.5 | V | VDS = VGS, ID = -250 μA | 2 |
| Gate-source leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 |
| Zero gate voltage drain current | IDSS | | | -1 | μA | VGS = 0 V, VDS = -20 V | 2 |
| Zero gate voltage drain current | IDSS | | | -50 | μA | VGS = 0 V, VDS = -20 V, TJ = 125 °C | 2 |
| Zero gate voltage drain current | IDSS | | | -150 | μA | VGS = 0 V, VDS = -20 V, TJ = 175 °C | 2 |
| On-state drain current | ID(on) | -8 | | | A | VGS = -4.5 V, VDS 5 V | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.08 | 0.115 | Ω | VGS = -4.5 V, ID = -2.4 A | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.168 | Ω | VGS = -4.5 V, ID = -2.4 A, TJ = 125 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | | 0.196 | Ω | VGS = -4.5 V, ID = -2.4 A, TJ = 175 °C | 2 |
| Drain-source on-state resistance | RDS(on) | | 0.15 | 0.205 | Ω | VGS = -2.5 V, ID = -1.8 A | 2 |
| Input capacitance | Ciss | | 265 | 330 | pF | VGS = 0 V, VDS = -10 V, f = 1 MHz | 2 |
| Output capacitance | Coss | | 75 | 94 | pF | VGS = 0 V, VDS = -10 V, f = 1 MHz | 2 |
| Reverse transfer capacitance | Crss | | 50 | 63 | pF | VGS = 0 V, VDS = -10 V, f = 1 MHz | 2 |
| Total gate charge | Qg | | 3.4 | 5.5 | nC | VGS = -4.5 V, VDS = -10 V, ID = -2.4 A | 2 |
| Gate resistance | Rg | 4.8 | 9.6 | 14.4 | Ω | f = 1 MHz | 2 |
| Turn-on delay time | td(on) | | 20 | 30 | ns | VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 | 2 |
| Rise time | tr | | 18 | 27 | ns | VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 | 2 |
| Turn-off delay time | td(off) | | 19 | 28 | ns | VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 | 2 |
| Fall time | tf | | 8 | 12 | ns | VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 | 2 |
| Pulsed current (source-drain diode) | ISM | | | -12.7 | A | | 2 |
| Forward voltage (source-drain diode) | VSD | | -0.8 | -1.2 | V | IF = -2 A, VGS = 0 | 2 |
## CAD (KiCad official)
- Symbol: `SQ2351ES-T1_GE3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sq2351es-t1-ge3-etched.step` / `sq2351es-t1-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sq2351es-t1-ge3.step` / `sq2351es-t1-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588924718744920064) (9 pp, sha256 `fa37e544d45db6ea`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sq2351es-t1-ge3-datasheet.pdf)