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SQ2351ES-T1_GE3

Vishay Intertech · MOSFETs · SOT-23

SQ2351ES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated VGS ±12 V (absolute maximum).
2 S passive Source of the MOSFET; continuous source current (diode conduction) is rated IS -2.5 A.
3 D passive Drain of the MOSFET; drain-source voltage is rated VDS -20 V and continuous drain current is rated ID -3.2 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V 1
Gate-source voltage VGS -12 12 V 1
Continuous drain current ID -3.2 A TC = 25 °C 1
Continuous drain current ID -1.8 A TC = 125 °C 1
Continuous source current (diode conduction) IS -2.5 A 1
Pulsed drain current IDM -12.7 A 1
Single pulse avalanche current IAS -6 A L = 0.1 mH 1
Single pulse avalanche energy EAS 1.8 mJ 1
Maximum power dissipation PD 2 W TC = 25 °C 1
Maximum power dissipation PD 0.67 W TC = 125 °C 1
Operating junction and storage temperature range TJ, Tstg -55 175 °C 1
Junction-to-ambient thermal resistance RthJA 175 °C/W PCB mount 1
Junction-to-foot (drain) thermal resistance RthJF 75 °C/W 1
Drain-source breakdown voltage VDS -20 V VGS = 0, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -0.6 -1 -1.5 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero gate voltage drain current IDSS -1 μA VGS = 0 V, VDS = -20 V 2
Zero gate voltage drain current IDSS -50 μA VGS = 0 V, VDS = -20 V, TJ = 125 °C 2
Zero gate voltage drain current IDSS -150 μA VGS = 0 V, VDS = -20 V, TJ = 175 °C 2
On-state drain current ID(on) -8 A VGS = -4.5 V, VDS 5 V 2
Drain-source on-state resistance RDS(on) 0.08 0.115 Ω VGS = -4.5 V, ID = -2.4 A 2
Drain-source on-state resistance RDS(on) 0.168 Ω VGS = -4.5 V, ID = -2.4 A, TJ = 125 °C 2
Drain-source on-state resistance RDS(on) 0.196 Ω VGS = -4.5 V, ID = -2.4 A, TJ = 175 °C 2
Drain-source on-state resistance RDS(on) 0.15 0.205 Ω VGS = -2.5 V, ID = -1.8 A 2
Input capacitance Ciss 265 330 pF VGS = 0 V, VDS = -10 V, f = 1 MHz 2
Output capacitance Coss 75 94 pF VGS = 0 V, VDS = -10 V, f = 1 MHz 2
Reverse transfer capacitance Crss 50 63 pF VGS = 0 V, VDS = -10 V, f = 1 MHz 2
Total gate charge Qg 3.4 5.5 nC VGS = -4.5 V, VDS = -10 V, ID = -2.4 A 2
Gate resistance Rg 4.8 9.6 14.4 Ω f = 1 MHz 2
Turn-on delay time td(on) 20 30 ns VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 2
Rise time tr 18 27 ns VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 2
Turn-off delay time td(off) 19 28 ns VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 2
Fall time tf 8 12 ns VDD = -10 V, RL = 5.21, ID -1.9 A, VGEN = -4.5 V, Rg = 1 2
Pulsed current (source-drain diode) ISM -12.7 A 2
Forward voltage (source-drain diode) VSD -0.8 -1.2 V IF = -2 A, VGS = 0 2

CAD (KiCad official)

  • Symbol: SQ2351ES-T1_GE3
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sq2351es-t1-ge3-etched.step / sq2351es-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sq2351es-t1-ge3.step / sq2351es-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (9 pp, sha256 fa37e544d45db6ea, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF