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SQ2308CES-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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sq2308ces-t1-ge3: specified limits as data (metadata.characteristics, 35 rows from the datasheet)
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SQ2308CES-T1_GE3
Vishay Intertech · MOSFETs · SOT-23
SQ2308CES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet limits gate-source voltage to VGS ±20 V (absolute maximum). |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet rates continuous source (diode conduction) current IS at 2.4 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; the datasheet rates VDS at 60 V and continuous drain current ID at 2.3 A (TC = 25 °C), and the drain pin also serves as the thermal connection to the PCB per AN807. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS = 0 V, VDS = 60 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 150 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 | ||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS = 0, ID = 250 μA | 2 | ||
| On-State Drain Current | ID(on) | 10 | A | VGS = 10 V, VDS ≥ 5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.125 | 0.15 | Ω | VGS = 10 V, ID = 2.3 A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.25 | Ω | VGS = 10 V, ID = 2.3 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.325 | Ω | VGS = 10 V, ID = 2.3 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.136 | 0.164 | Ω | VGS = 4.5 V, ID = 2.1 A | 2 | |
| Input Capacitance | Ciss | 164 | 205 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 | |
| Output Capacitance | Coss | 22 | 28 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 14 | 18 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 | |
| Total Gate Charge | Qg | 3.5 | 5.3 | nC | VGS = 10 V, VDS = 30 V, ID = 2 A | 2 | |
| Gate Resistance | Rg | 2.9 | 5.84 | 9 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 46 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 | ||
| Rise Time | tr | 9 | 13 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 12 | 17 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 12 | 18 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Pulsed Current | ISM | 9 | A | Source-drain diode ratings | 2 | ||
| Forward Voltage | VSD | 0.85 | 1.2 | V | IF = 1.6 A, VGS = 0 | 2 | |
| Drain-Source Voltage | VDS | 60 | V | Absolute maximum rating, TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | Absolute maximum rating | 1 | |
| Continuous Drain Current | ID | 2.3 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 1.3 | A | TC = 125 °C | 1 | ||
| Continuous Source Current (Diode Conduction) | IS | 2.4 | A | Absolute maximum rating | 1 | ||
| Pulsed Drain Current | IDM | 9 | A | Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % | 1 | ||
| Single Pulse Avalanche Current | IAS | 7 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 2.5 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.6 | W | TC = 125 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 120 | °C/W | PCB mount | 1 | ||
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 80 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SQ2308CES-T1_GE3 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sq2308ces-t1-ge3-etched.step/sq2308ces-t1-ge3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sq2308ces-t1-ge3.step/sq2308ces-t1-ge3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Vishay Intertech datasheet (11 pp, sha256
119008f488e5b9e3, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SQ2308CES-T1_GE3
**Vishay Intertech** · MOSFETs · SOT-23
SQ2308CES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the datasheet limits gate-source voltage to VGS ±20 V (absolute maximum). |
| 2 | S | passive | Source of the N-channel MOSFET; the datasheet rates continuous source (diode conduction) current IS at 2.4 A. |
| 3 | D | passive | Drain of the N-channel MOSFET; the datasheet rates VDS at 60 V and continuous drain current ID at 2.3 A (TC = 25 °C), and the drain pin also serves as the thermal connection to the PCB per AN807. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Vishay Intertech |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 60 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 150 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 |
| Drain-Source Breakdown Voltage | VDS | 60 | | | V | VGS = 0, ID = 250 μA | 2 |
| On-State Drain Current | ID(on) | 10 | | | A | VGS = 10 V, VDS ≥ 5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.125 | 0.15 | Ω | VGS = 10 V, ID = 2.3 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.25 | Ω | VGS = 10 V, ID = 2.3 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.325 | Ω | VGS = 10 V, ID = 2.3 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.136 | 0.164 | Ω | VGS = 4.5 V, ID = 2.1 A | 2 |
| Input Capacitance | Ciss | | 164 | 205 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 22 | 28 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 14 | 18 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 3.5 | 5.3 | nC | VGS = 10 V, VDS = 30 V, ID = 2 A | 2 |
| Gate Resistance | Rg | 2.9 | 5.84 | 9 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | | 46 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 9 | 13 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 12 | 17 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 12 | 18 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Pulsed Current | ISM | | | 9 | A | Source-drain diode ratings | 2 |
| Forward Voltage | VSD | | 0.85 | 1.2 | V | IF = 1.6 A, VGS = 0 | 2 |
| Drain-Source Voltage | VDS | | | 60 | V | Absolute maximum rating, TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | Absolute maximum rating | 1 |
| Continuous Drain Current | ID | | | 2.3 | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 1.3 | A | TC = 125 °C | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 2.4 | A | Absolute maximum rating | 1 |
| Pulsed Drain Current | IDM | | | 9 | A | Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % | 1 |
| Single Pulse Avalanche Current | IAS | | | 7 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 2.5 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 2 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 0.6 | W | TC = 125 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | | 120 | °C/W | PCB mount | 1 |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | | | 80 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `SQ2308CES-T1_GE3`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sq2308ces-t1-ge3-etched.step` / `sq2308ces-t1-ge3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sq2308ces-t1-ge3.step` / `sq2308ces-t1-ge3.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Vishay Intertech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586188073105567744) (11 pp, sha256 `119008f488e5b9e3`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sq2308ces-t1-ge3-datasheet.pdf)