component
SQ2308CES-T1_GE3
Public Made by Adomby adom
Vishay Intertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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sq2308ces-t1-ge3: specified limits as data (metadata.characteristics, 35 rows from the datasheet)
2 files changed
+470−1
README.md+42@@ -21,6 +21,48 @@ SQ2308CES-T1_GE3 from Vishay Intertech, in a SOT-23. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-Source Threshold Voltage | VGS(th) | 1.5 | 2 | 2.5 | V | VDS = VGS, ID = 250 μA | 2 |+| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VGS = 0 V, VDS = 60 V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 50 | μA | VGS = 0 V, VDS = 60 V, TJ = 125 °C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 150 | μA | VGS = 0 V, VDS = 60 V, TJ = 175 °C | 2 |+| Drain-Source Breakdown Voltage | VDS | 60 | | | V | VGS = 0, ID = 250 μA | 2 |+| On-State Drain Current | ID(on) | 10 | | | A | VGS = 10 V, VDS ≥ 5 V | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.125 | 0.15 | Ω | VGS = 10 V, ID = 2.3 A | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.25 | Ω | VGS = 10 V, ID = 2.3 A, TJ = 125 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | | 0.325 | Ω | VGS = 10 V, ID = 2.3 A, TJ = 175 °C | 2 |+| Drain-Source On-State Resistance | RDS(on) | | 0.136 | 0.164 | Ω | VGS = 4.5 V, ID = 2.1 A | 2 |+| Input Capacitance | Ciss | | 164 | 205 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 |+| Output Capacitance | Coss | | 22 | 28 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 14 | 18 | pF | VGS = 0 V, VDS = 30 V, f = 1 MHz | 2 |+| Total Gate Charge | Qg | | 3.5 | 5.3 | nC | VGS = 10 V, VDS = 30 V, ID = 2 A | 2 |+| Gate Resistance | Rg | 2.9 | 5.84 | 9 | Ω | f = 1 MHz | 2 |+| Turn-On Delay Time | td(on) | | | 46 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Rise Time | tr | | 9 | 13 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Turn-Off Delay Time | td(off) | | 12 | 17 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Fall Time | tf | | 12 | 18 | ns | VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω | 2 |+| Pulsed Current | ISM | | | 9 | A | Source-drain diode ratings | 2 |+| Forward Voltage | VSD | | 0.85 | 1.2 | V | IF = 1.6 A, VGS = 0 | 2 |+| Drain-Source Voltage | VDS | | | 60 | V | Absolute maximum rating, TC = 25 °C | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | Absolute maximum rating | 1 |+| Continuous Drain Current | ID | | | 2.3 | A | TC = 25 °C | 1 |+| Continuous Drain Current | ID | | | 1.3 | A | TC = 125 °C | 1 |+| Continuous Source Current (Diode Conduction) | IS | | | 2.4 | A | Absolute maximum rating | 1 |+| Pulsed Drain Current | IDM | | | 9 | A | Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % | 1 |+| Single Pulse Avalanche Current | IAS | | | 7 | A | L = 0.1 mH | 1 |+| Single Pulse Avalanche Energy | EAS | | | 2.5 | mJ | L = 0.1 mH | 1 |+| Maximum Power Dissipation | PD | | | 2 | W | TC = 25 °C | 1 |+| Maximum Power Dissipation | PD | | | 0.6 | W | TC = 125 °C | 1 |+| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |+| Junction-to-Ambient Thermal Resistance | RthJA | | | 120 | °C/W | PCB mount | 1 |+| Junction-to-Foot (Drain) Thermal Resistance | RthJF | | | 80 | °C/W | | 1 |+ ## CAD (KiCad official) - Symbol: `SQ2308CES-T1_GE3`
page.json+428−1@@ -151,6 +151,433 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "119008f488e5b9e3",+ "rows": [+ {+ "name": "Gate-Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.5,+ "typ": 2,+ "max": 2.5,+ "conditions": "VDS = VGS, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0 V, VGS = ± 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 60 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0 V, VDS = 60 V, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VGS = 0 V, VDS = 60 V, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "VDS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0, ID = 250 μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "VGS = 10 V, VDS ≥ 5 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.125,+ "max": 0.15,+ "conditions": "VGS = 10 V, ID = 2.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.25,+ "conditions": "VGS = 10 V, ID = 2.3 A, TJ = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": null,+ "max": 0.325,+ "conditions": "VGS = 10 V, ID = 2.3 A, TJ = 175 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.136,+ "max": 0.164,+ "conditions": "VGS = 4.5 V, ID = 2.1 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 164,+ "max": 205,+ "conditions": "VGS = 0 V, VDS = 30 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 22,+ "max": 28,+ "conditions": "VGS = 0 V, VDS = 30 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 14,+ "max": 18,+ "conditions": "VGS = 0 V, VDS = 30 V, f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.5,+ "max": 5.3,+ "conditions": "VGS = 10 V, VDS = 30 V, ID = 2 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 2.9,+ "typ": 5.84,+ "max": 9,+ "conditions": "f = 1 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": null,+ "max": 46,+ "conditions": "VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 9,+ "max": 13,+ "conditions": "VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 17,+ "conditions": "VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 12,+ "max": 18,+ "conditions": "VDD = 30 V, RL = 15 Ω, ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9,+ "conditions": "Source-drain diode ratings",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.85,+ "max": 1.2,+ "conditions": "IF = 1.6 A, VGS = 0",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "Absolute maximum rating, TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Absolute maximum rating",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.3,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TC = 125 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Diode Conduction)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.4,+ "conditions": "Absolute maximum rating",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9,+ "conditions": "Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "L = 0.1 mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "TC = 25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "TC = 125 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "PCB mount",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Foot (Drain) Thermal Resistance",+ "symbol": "RthJF",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +619,4 @@ "visibility": { "public": true }-}+}