SPD02N80C3

{
  "schema_version": 1,
  "type": "component",
  "slug": "spd02n80c3",
  "title": "SPD02N80C3",
  "brief": "Infineon Technologies MOSFETs, TO-252-2(DPAK). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "spd02n80c3",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "SPD02N80C3",
    "manufacturer": "Infineon Technologies",
    "package": "TO-252-2(DPAK)",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586205697516179456",
    "parts": {
      "symbol": "spd02n80c3.kicad_sym",
      "footprint": "spd02n80c3.kicad_mod",
      "model_3d": "spd02n80c3-hero.glb",
      "model_3d_plain": "spd02n80c3-etched.glb",
      "model_3d_step": "spd02n80c3-etched.step",
      "model_3d_step_plain": "spd02n80c3.step",
      "lbr": "spd02n80c3.lbr"
    },
    "distributor_links": {
      "lcsc": "C168884",
      "mouser": "726-SPD02N80C3"
    },
    "distributor_check": {
      "checked_at": "2026-10-21T01:28:36Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": "726-SPD02N80C3",
        "status": "found",
        "lifecycle": "Obsolete"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate pin 1; static gate-source voltage limit is ±20 V (±30 V AC, f >1 Hz), with gate threshold 2.1 to 3.9 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain pin 2, also connected to the tab; the device blocks 800 V drain-source and carries 2 A continuous at TC=25 °C (6 A pulsed)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source pin 3, the power return of the MOSFET and the anode of the body diode, which carries 2 A continuous."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet pin drawing shows the tab as 2 (tab), so it is the drain. The package hint says TO-252; Source and drain are typed passive because no KiCad ERC class fits a MOSFET terminal exactly. Change",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 10,
        "cost_usd": 0.2355,
        "at": "2026-10-21T01:23:11"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586205697516179456",
        "pages": 10,
        "sha256": "38b298ea0dc4ea31",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "spd02n80c3.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-21",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "spd02n80c3-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          9.9,
          6.5,
          2.32
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "11960568e91313ce935018bb77e0d05ec9fa010cdccaca34eed2b14143c86646",
        "checked": "2026-10-21",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "Infineon Technologies",
      "Package": "TO-252-2(DPAK)",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "38b298ea0dc4ea318cf90fbb0a2de8f40e77e8633b329bc6b099d393e8d91b3e",
      "rows": [
        {
          "name": "Continuous drain current (TC=25 °C)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 2,
          "conditions": "TC=25 °C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current (TC=100 °C)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 1.2,
          "conditions": "TC=100 °C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed drain current",
          "symbol": "ID,pulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 6,
          "conditions": "TC=25 °C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 90,
          "conditions": "ID=1 A, VDD=50 V",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, repetitive",
          "symbol": "EAR",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 0.05,
          "conditions": "ID=2 A, VDD=50 V",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche current, repetitive",
          "symbol": "IAR",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 2,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "MOSFET dv/dt ruggedness",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VDS=0…640 V",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate source voltage, static",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "static",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate source voltage, AC",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "AC (f >1 Hz)",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 42,
          "conditions": "TC=25 °C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Operating and storage temperature",
          "symbol": "Tj, Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Diode pulse current",
          "symbol": "IS,pulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 6,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Reverse diode dv/dt",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 4,
          "conditions": "ISD=ID, di/dt=400 A/µs, VDClink=400 V, Vpeak<V(BR)DSS, Tj<Tjmax",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction - case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 3,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction - ambient, SMD on PCB, minimal footprint",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": null,
          "max": 62,
          "conditions": "SMD version, device on PCB, minimal footprint",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction - ambient, SMD on PCB, 6 cm2 cooling area",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "K/W",
          "min": null,
          "typ": 35,
          "max": null,
          "conditions": "SMD version, device on PCB, 6 cm2 cooling area",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Soldering temperature, reflow",
          "symbol": "Tsold",
          "kind": "thermal",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "MSL1",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 800,
          "typ": null,
          "max": null,
          "conditions": "VGS=0 V, ID=250 µA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2.1,
          "typ": 3,
          "max": 3.9,
          "conditions": "VDS=VGS, ID=0.12 mA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current, Tj=25 °C",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 5,
          "conditions": "VDS=800 V, VGS=0 V, Tj=25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-source leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VGS=20 V, VDS=0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance, Tj=25 °C",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 2.4,
          "max": 2.7,
          "conditions": "VGS=10 V, ID=1.2 A, Tj=25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Avalanche breakdown voltage",
          "symbol": "V(BR)DS",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 870,
          "max": null,
          "conditions": "VGS=0 V, ID=2 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current, Tj=150 °C",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": 25,
          "max": null,
          "conditions": "VDS=800 V, VGS=0 V, Tj=150 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance, Tj=150 °C",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 6.5,
          "max": null,
          "conditions": "VGS=10 V, ID=1.2 A, Tj=150 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate resistance",
          "symbol": "RG",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 1.2,
          "max": null,
          "conditions": "f=1 MHz, open drain",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Input capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 290,
          "max": null,
          "conditions": "VGS=0 V, VDS=100 V, f=1 MHz",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Output capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 13,
          "max": null,
          "conditions": "VGS=0 V, VDS=100 V, f=1 MHz",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Effective output capacitance, energy related",
          "symbol": "Co(er)",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 11,
          "max": null,
          "conditions": "VGS=0 V, VDS=0 V to 480 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Effective output capacitance, time related",
          "symbol": "Co(tr)",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 26,
          "max": null,
          "conditions": "VGS=0 V, VDS=0 V to 480 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Turn-on delay time",
          "symbol": "td(on)",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 25,
          "max": null,
          "conditions": "VDD=400 V, VGS=0/10 V, ID=2 A, RG=47 Ω, Tj=25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Rise time",
          "symbol": "tr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 15,
          "max": null,
          "conditions": "VDD=400 V, VGS=0/10 V, ID=2 A, RG=47 Ω, Tj=25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Turn-off delay time",
          "symbol": "td(off)",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 72,
          "max": null,
          "conditions": "VDD=400 V, VGS=0/10 V, ID=2 A, RG=47 Ω, Tj=25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Fall time",
          "symbol": "tf",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 18,
          "max": null,
          "conditions": "VDD=400 V, VGS=0/10 V, ID=2 A, RG=47 Ω, Tj=25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate to source charge",
          "symbol": "Qgs",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 1.5,
          "max": null,
          "conditions": "VDD=640 V, ID=2 A, VGS=0 to 10 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate to drain charge",
          "symbol": "Qgd",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 6,
          "max": null,
          "conditions": "VDD=640 V, ID=2 A, VGS=0 to 10 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate charge total",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 12,
          "max": 16,
          "conditions": "VDD=640 V, ID=2 A, VGS=0 to 10 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate plateau voltage",
          "symbol": "Vplateau",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 5.5,
          "max": null,
          "conditions": "VDD=640 V, ID=2 A, VGS=0 to 10 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Diode forward voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 1,
          "max": 1.2,
          "conditions": "VGS=0 V, IF=IS=2 A, Tj=25 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Reverse recovery time",
          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 520,
          "max": null,
          "conditions": "VR=400 V, IF=IS=2 A, diF/dt=100 A/µs",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Reverse recovery charge",
          "symbol": "Qrr",
          "kind": "electrical",
          "unit": "µC",
          "min": null,
          "typ": 2,
          "max": null,
          "conditions": "VR=400 V, IF=IS=2 A, diF/dt=100 A/µs",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Peak reverse recovery current",
          "symbol": "Irrm",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": 6,
          "max": null,
          "conditions": "VR=400 V, IF=IS=2 A, diF/dt=100 A/µs",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "spd02n80c3"
  ],
  "discovery_pitch": "SPD02N80C3 (Infineon Technologies) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "spd02n80c3.kicad_sym",
    "spd02n80c3.kicad_mod",
    "spd02n80c3.glb",
    "spd02n80c3.step",
    "spd02n80c3.lbr",
    "docs/hero.png",
    "docs/spd02n80c3-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "spd02n80c3-hero.glb",
    "spd02n80c3-hero.overlay.json",
    "spd02n80c3-etched.glb"
  ],
  "visibility": {
    "public": true
  }
}