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SP60N1K1T2

Public Made by Adom

by adom

Siliup MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP60N1K1T2

Siliup · MOSFETs · SOT-23

SP60N1K1T2 from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V (VGSS), threshold 1 V min to 2.5 V max at 250 µA, with ESD protection of 2KV.
2 S passive Source; continuous drain current up to 300 mA, body diode forward voltage 1.2 V max at IS=1 A.
3 D passive Drain; drain-source voltage rated 60 V (VDSS), continuous current 300 mA and pulsed 1200 mA.

Key specifications

Parameter Value
Manufacturer Siliup
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 300 mA 2
Pulse Drain Current Tested IDM 1200 mA 2
Power Dissipation PD 225 mW 2
Thermal Resistance Junction-to-Ambient RθJA 555 °C/W 2
Storage Temperature Range TSTG -55 150 °C 2
Operating Junction Temperature Range TJ -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V , ID=250µA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V , VGS=0V 2
Gate-Source Leakage Current IGSS -1 1 uA VGS=±20V , VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS , ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 1.1 3 Ω VGS =10V, ID =500mA 2
Static Drain-Source On-Resistance RDS(ON) 1.4 4 Ω VGS =4.5V, ID =200mA 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
Input Capacitance Ciss 50 pF VDS=25V , VGS=0V , f=1MHz 2
Output Capacitance Coss 25 pF 2
Reverse Transfer Capacitance Crss 5 pF 2
Total Gate Charge Qg 1.4 nC VDS=10V , VGS=4.5V , ID=1A 2
Gate-Source Charge Qgs 0.5 nC 2
Gate-Drain Charge Qgd 0.2 nC 2
Turn-On Delay Time td(on) 4 nS VDD=25V VGS=10V , RG=25Ω , ID=1A 2
Turn-On Rise Time tr 18 nS 2
Turn-Off Delay Time td(off) 10 nS 2
Turn-Off Fall Time tf 24 nS 2

CAD (KiCad official)

  • Symbol: SP60N1K1T2
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sp60n1k1t2-etched.step / sp60n1k1t2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n1k1t2.step / sp60n1k1t2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 42fad27443c048ca, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF