component
SP60N1K1T2
Public Made by Adomby adom
Siliup MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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SP60N1K1T2
Siliup · MOSFETs · SOT-23
SP60N1K1T2 from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VGSS), threshold 1 V min to 2.5 V max at 250 µA, with ESD protection of 2KV. |
| 2 | S | passive | Source; continuous drain current up to 300 mA, body diode forward voltage 1.2 V max at IS=1 A. |
| 3 | D | passive | Drain; drain-source voltage rated 60 V (VDSS), continuous current 300 mA and pulsed 1200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 300 | mA | 2 | |||
| Pulse Drain Current Tested | IDM | 1200 | mA | 2 | |||
| Power Dissipation | PD | 225 | mW | 2 | |||
| Thermal Resistance Junction-to-Ambient | RθJA | 555 | °C/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V , ID=250µA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V , VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -1 | 1 | uA | VGS=±20V , VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS , ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 1.1 | 3 | Ω | VGS =10V, ID =500mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.4 | 4 | Ω | VGS =4.5V, ID =200mA | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V , IS=1A , TJ=25℃ | 2 | ||
| Input Capacitance | Ciss | 50 | pF | VDS=25V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 25 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | 2 | |||
| Total Gate Charge | Qg | 1.4 | nC | VDS=10V , VGS=4.5V , ID=1A | 2 | ||
| Gate-Source Charge | Qgs | 0.5 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 0.2 | nC | 2 | |||
| Turn-On Delay Time | td(on) | 4 | nS | VDD=25V VGS=10V , RG=25Ω , ID=1A | 2 | ||
| Turn-On Rise Time | tr | 18 | nS | 2 | |||
| Turn-Off Delay Time | td(off) | 10 | nS | 2 | |||
| Turn-Off Fall Time | tf | 24 | nS | 2 |
CAD (KiCad official)
- Symbol:
SP60N1K1T2 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
sp60n1k1t2-etched.step/sp60n1k1t2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp60n1k1t2.step/sp60n1k1t2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
42fad27443c048ca, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).