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SP60N03GTH

Public Made by Adom

by adom

Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SP60N03GTH

Siliup · MOSFETs · TO-252

SP60N03GTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated ±20 V (VGSS) per the absolute maximum ratings.
2 D passive Drain terminal; drain-source voltage is rated 60 V (VDSS) and continuous drain current 140 A at Tc=25°C.
3 S passive Source terminal; the gate-source voltage rating of ±20 V (VGSS) is referenced to this pin.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 140 A Tc=25°C 2
Continuous Drain Current ID 94 A Tc=100°C 2
Pulse Drain Current IDM 560 A Tested 2
Single Pulse Avalanche Energy EAS 441 mJ 2
Power Dissipation PD 110 W Tc=25°C 2
Power Dissipation PD 44 W Tc=100°C 2
Maximum Junction Temperature TJ -55 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Thermal Resistance Junction-to-Case RθJC 1.14 °C/W 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250mA 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=48V, VGS=0V 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1.3 1.7 2.3 V VDS=VGS, ID=250uA 2
Drain-Source On-state Resistance RDS(ON) 3.1 3.9 mΩ VGS=10V, ID=20A 2
Drain-Source On-state Resistance RDS(ON) 4 5.3 mΩ VGS=4.5V, ID=10A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 140 A 2
Gate Resistance RG 2.4 Ω VDS=30V, VGS=0V, f=1MHz 2
Input Capacitance Ciss 4300 pF VGS=0V, VDS=30V, F=1MHz 2
Output Capacitance Coss 1700 pF VGS=0V, VDS=30V, F=1MHz 2
Reverse Transfer Capacitance Crss 73 pF VGS=0V, VDS=30V, F=1MHz 2
Total Gate Charge Qg 61 nC VDS=30V, VGS=10V, ID=20A 2
Gate-Source Charge Qgs 14 nC VDS=30V, VGS=10V, ID=20A 2
Gate-Drain Charge Qgd 12 nC VDS=30V, VGS=10V, ID=20A 2
Gate Plateau Voltage Vplateau 3.75 V VDS=30V, VGS=10V, ID=20A 2
Turn-On Delay Time td(on) 16 nS VDD=30V, ID=20A, VGS=10V, RG=3Ω 2
Rise Time tr 114 nS VDD=30V, ID=20A, VGS=10V, RG=3Ω 2
Turn-Off Delay Time td(off) 47.5 nS VDD=30V, ID=20A, VGS=10V, RG=3Ω 2
Fall Time tf 136.5 nS VDD=30V, ID=20A, VGS=10V, RG=3Ω 2
Reverse Recovery Time Trr 35 nS IS=50 A,di/dt=100 A/μs，TJ=25℃ 2
Reverse Recovery Charge Qrr 30 nC IS=50 A,di/dt=100 A/μs，TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP60N03GTH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sp60n03gth-etched.step / sp60n03gth-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp60n03gth.step / sp60n03gth.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (9 pp, sha256 7f6a23f7bd74aa6f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF