# SP60N02BGTD

**Siliup** · MOSFETs · TO-263

SP60N02BGTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, with gate-source voltage limited to ±20 V (VGSS) in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 60 V (VDSS) and a continuous drain current of 180 A at Tc=25°C. |
| 3 | S | passive | Source terminal, with the body diode forward voltage VSD specified at 1.2 V max for IS=1 A (VGS=0 V, TJ=25°C) and maximum body-diode continuous current of 180 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 60 | V |  | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current | ID |  |  | 180 | A | Tc=25°C | 2 |
| Continuous Drain Current | ID |  |  | 120 | A | Tc=100°C | 2 |
| Pulse Drain Current | IDM |  |  | 720 | A |  | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 675 | mJ |  | 2 |
| Power Dissipation | PD |  |  | 170 | W | Tc=25°C | 2 |
| Thermal Resistance Junction-to-Case | RθJC |  |  | 0.74 | °C/W |  | 2 |
| Maximum Junction Temperature | TJ | -55 |  | 150 | °C |  | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250mA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=48V, VGS=0V | 2 |
| Gate Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 2.5 | 3.2 | mΩ | VGS=10V, ID=40A | 2 |
| Drain-Source On-state Resistance | RDS(ON) |  | 2.9 | 5.2 | mΩ | VGS=4.5V, ID=40A | 2 |
| Source-Drain Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 180 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `SP60N02BGTD`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `sp60n02bgtd-etched.step` / `sp60n02bgtd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sp60n02bgtd.step` / `sp60n02bgtd.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Siliup datasheet](docs/sp60n02bgtd-datasheet.pdf) (6 pp, sha256 `9c5762ab5cecec8d`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sp60n02bgtd-datasheet.pdf)