component
SP60N02BGTD
Public Made by Adomby adom
Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2d ago |
| viewers | 2d ago |
| package.json | 2d ago |
| page.json | 2d ago |
| README.md | 2d ago |
| sp60n02bgtd-etched.glb | 2d ago |
| sp60n02bgtd-etched.step | 2d ago |
| sp60n02bgtd-hero.glb | 2d ago |
| sp60n02bgtd-hero.overlay.json | 2d ago |
| sp60n02bgtd.glb | 2d ago |
| sp60n02bgtd.kicad_mod | 2d ago |
| sp60n02bgtd.kicad_sym | 2d ago |
| sp60n02bgtd.lbr | 2d ago |
| sp60n02bgtd.step | 2d ago |
| verification.json | 2d ago |
SP60N02BGTD
Siliup · MOSFETs · TO-263
SP60N02BGTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, with gate-source voltage limited to ±20 V (VGSS) in the absolute maximum ratings. |
| 2 | D | passive | Drain terminal, rated for a drain-source voltage of 60 V (VDSS) and a continuous drain current of 180 A at Tc=25°C. |
| 3 | S | passive | Source terminal, with the body diode forward voltage VSD specified at 1.2 V max for IS=1 A (VGS=0 V, TJ=25°C) and maximum body-diode continuous current of 180 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 180 | A | Tc=25°C | 2 | ||
| Continuous Drain Current | ID | 120 | A | Tc=100°C | 2 | ||
| Pulse Drain Current | IDM | 720 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 675 | mJ | 2 | |||
| Power Dissipation | PD | 170 | W | Tc=25°C | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 0.74 | °C/W | 2 | |||
| Maximum Junction Temperature | TJ | -55 | 150 | °C | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250mA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=48V, VGS=0V | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.2 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source On-state Resistance | RDS(ON) | 2.5 | 3.2 | mΩ | VGS=10V, ID=40A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 2.9 | 5.2 | mΩ | VGS=4.5V, ID=40A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 180 | A | 2 |
CAD (KiCad official)
- Symbol:
SP60N02BGTD - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
sp60n02bgtd-etched.step/sp60n02bgtd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp60n02bgtd.step/sp60n02bgtd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (6 pp, sha256
9c5762ab5cecec8d, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).