component
SP50N120CTF
Public Made by Adomby adom
Siliup Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SP50N120CTF
Siliup · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3L
SP50N120CTF from Siliup, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; recommended drive is -4/+18 V with an absolute maximum of -8/+22 V gate-source. |
| 2 | D | passive | Drain; rated for 1200 V drain-source voltage and 50 A continuous current at Tc=100℃. |
| 3 | S | passive | Source; power source terminal of the SiC MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-247-3L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 1200 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | 100 | uA | VDS=1200V, VGS=0V, TJ=25℃ | 2 | |
| Gate-Source Leakage Current | IGSS | 1 | 100 | nA | VGS=18V, VDS=0V, TJ=25℃ | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.5 | 4 | V | VGS=VDS, ID=5mA, Tj=25℃ | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 45 | mΩ | VGS=18V, ID=20A, Tj=25℃ | 2 | |
| Drain-Source Voltage | VDS | 1200 | V | Ta=25℃ | 2 | ||
| Gate-Source Voltage | VGSMAX | -8 | 22 | V | Ta=25℃ | 2 | |
| Recommend Gate-Source Voltage | VGSop | -4 | 18 | V | 2 | ||
| Continuous Drain Current | ID | 74 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current | ID | 50 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 150 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 1805 | mJ | VDD=50V,VGS=10V,L=10mH,RG=25Ω | 2 | ||
| Power Dissipation | PD | 312 | W | Tc=25℃ | 2 | ||
| Power Dissipation | PD | 156 | W | Tc=100℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 2 | ||
| Thermal Resistance Junction-Case | RθJC | 0.51 | ℃/W | 2 | |||
| Gate Threshold Voltage | VGS(th) | 1.8 | V | VGS=VDS, ID=5mA, Tj=175℃ | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 69 | mΩ | VGS=18V, ID=20A, Tj=175℃ | 2 | ||
| Input Capacitance | Ciss | 2975 | pF | VDS=1000V, VGS=0V, f=100KHz | 2 | ||
| Output Capacitance | Coss | 119 | pF | VDS=1000V, VGS=0V, f=100KHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 12 | pF | VDS=1000V, VGS=0V, f=100KHz | 2 | ||
| Total Gate Charge | Qg | 117 | nC | VDS=800V, VGS=-4/+18V, ID=40A | 2 | ||
| Gate-Source Charge | Qgs | 38 | nC | VDS=800V, VGS=-4/+18V, ID=40A | 2 | ||
| Gate-Drain Charge | Qgd | 27 | nC | VDS=800V, VGS=-4/+18V, ID=40A | 2 | ||
| Turn-On Delay Time | Td(on) | 18 | ns | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 | ||
| Rise Time | Tr | 21 | ns | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 31 | ns | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 | ||
| Fall Time | Tf | 9 | ns | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 | ||
| Turn-On Energy | Eon | 485 | μJ | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 | ||
| Turn-Off Energy | Eoff | 75 | μJ | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 | ||
| Total Switching Loss | Etot | 253 | μJ | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 | ||
| Diode Forward Voltage | VSD | 5 | V | VGS=-4V, ISD=20A, TJ=25℃ | 2 | ||
| Diode Forward Voltage | VSD | 4.4 | V | VGS=-4V, ISD=20A, TJ=175℃ | 2 | ||
| Continuous Diode Forward Current | IS | 45 | A | VGS=-4V, Tc=25°C | 2 | ||
| Continuous Diode Forward Current | IS | 25 | A | VGS=-4V, Tc=100°C | 2 | ||
| Reverse Recovery Time | trr | 19 | ns | VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 500 | nC | VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/μs | 2 | ||
| Peak Reverse Recovery Current | Irrm | 50 | A | VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/μs | 2 |
CAD (KiCad official)
- Symbol:
SP50N120CTF - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files:
sp50n120ctf-etched.step/sp50n120ctf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp50n120ctf.step/sp50n120ctf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (9 pp, sha256
8c85d9fb76b61f7a, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SP50N120CTF
**Siliup** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3L
SP50N120CTF from Siliup, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; recommended drive is -4/+18 V with an absolute maximum of -8/+22 V gate-source. |
| 2 | D | passive | Drain; rated for 1200 V drain-source voltage and 50 A continuous current at Tc=100℃. |
| 3 | S | passive | Source; power source terminal of the SiC MOSFET. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-247-3L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 1200 | | | V | VGS=0V, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | 1 | 100 | uA | VDS=1200V, VGS=0V, TJ=25℃ | 2 |
| Gate-Source Leakage Current | IGSS | | 1 | 100 | nA | VGS=18V, VDS=0V, TJ=25℃ | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 2.5 | 4 | V | VGS=VDS, ID=5mA, Tj=25℃ | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 35 | 45 | mΩ | VGS=18V, ID=20A, Tj=25℃ | 2 |
| Drain-Source Voltage | VDS | | | 1200 | V | Ta=25℃ | 2 |
| Gate-Source Voltage | VGSMAX | -8 | | 22 | V | Ta=25℃ | 2 |
| Recommend Gate-Source Voltage | VGSop | -4 | | 18 | V | | 2 |
| Continuous Drain Current | ID | | | 74 | A | Tc=25℃ | 2 |
| Continuous Drain Current | ID | | | 50 | A | Tc=100℃ | 2 |
| Pulsed Drain Current | IDM | | | 150 | A | | 2 |
| Single Pulse Avalanche Energy | EAS | | | 1805 | mJ | VDD=50V,VGS=10V,L=10mH,RG=25Ω | 2 |
| Power Dissipation | PD | | | 312 | W | Tc=25℃ | 2 |
| Power Dissipation | PD | | | 156 | W | Tc=100℃ | 2 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 2 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 2 |
| Thermal Resistance Junction-Case | RθJC | | | 0.51 | ℃/W | | 2 |
| Gate Threshold Voltage | VGS(th) | | 1.8 | | V | VGS=VDS, ID=5mA, Tj=175℃ | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 69 | | mΩ | VGS=18V, ID=20A, Tj=175℃ | 2 |
| Input Capacitance | Ciss | | 2975 | | pF | VDS=1000V, VGS=0V, f=100KHz | 2 |
| Output Capacitance | Coss | | 119 | | pF | VDS=1000V, VGS=0V, f=100KHz | 2 |
| Reverse Transfer Capacitance | Crss | | 12 | | pF | VDS=1000V, VGS=0V, f=100KHz | 2 |
| Total Gate Charge | Qg | | 117 | | nC | VDS=800V, VGS=-4/+18V, ID=40A | 2 |
| Gate-Source Charge | Qgs | | 38 | | nC | VDS=800V, VGS=-4/+18V, ID=40A | 2 |
| Gate-Drain Charge | Qgd | | 27 | | nC | VDS=800V, VGS=-4/+18V, ID=40A | 2 |
| Turn-On Delay Time | Td(on) | | 18 | | ns | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 |
| Rise Time | Tr | | 21 | | ns | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 |
| Turn-Off Delay Time | Td(off) | | 31 | | ns | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 |
| Fall Time | Tf | | 9 | | ns | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 |
| Turn-On Energy | Eon | | 485 | | μJ | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 |
| Turn-Off Energy | Eoff | | 75 | | μJ | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 |
| Total Switching Loss | Etot | | 253 | | μJ | VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω | 2 |
| Diode Forward Voltage | VSD | | 5 | | V | VGS=-4V, ISD=20A, TJ=25℃ | 2 |
| Diode Forward Voltage | VSD | | 4.4 | | V | VGS=-4V, ISD=20A, TJ=175℃ | 2 |
| Continuous Diode Forward Current | IS | | 45 | | A | VGS=-4V, Tc=25°C | 2 |
| Continuous Diode Forward Current | IS | | 25 | | A | VGS=-4V, Tc=100°C | 2 |
| Reverse Recovery Time | trr | | 19 | | ns | VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/μs | 2 |
| Reverse Recovery Charge | Qrr | | 500 | | nC | VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/μs | 2 |
| Peak Reverse Recovery Current | Irrm | | 50 | | A | VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/μs | 2 |
## CAD (KiCad official)
- Symbol: `SP50N120CTF`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files: `sp50n120ctf-etched.step` / `sp50n120ctf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sp50n120ctf.step` / `sp50n120ctf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Siliup datasheet](docs/sp50n120ctf-datasheet.pdf) (9 pp, sha256 `8c85d9fb76b61f7a`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/sp50n120ctf-datasheet.pdf)