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SP50N120CTF

Siliup · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3L

SP50N120CTF from Siliup, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; recommended drive is -4/+18 V with an absolute maximum of -8/+22 V gate-source.
2 D passive Drain; rated for 1200 V drain-source voltage and 50 A continuous current at Tc=100℃.
3 S passive Source; power source terminal of the SiC MOSFET.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-247-3L
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 1200 V VGS=0V, ID=250uA 2
Drain-Source Leakage Current IDSS 1 100 uA VDS=1200V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS 1 100 nA VGS=18V, VDS=0V, TJ=25℃ 2
Gate Threshold Voltage VGS(th) 2 2.5 4 V VGS=VDS, ID=5mA, Tj=25℃ 2
Static Drain-Source On-Resistance RDS(ON) 35 45 mΩ VGS=18V, ID=20A, Tj=25℃ 2
Drain-Source Voltage VDS 1200 V Ta=25℃ 2
Gate-Source Voltage VGSMAX -8 22 V Ta=25℃ 2
Recommend Gate-Source Voltage VGSop -4 18 V 2
Continuous Drain Current ID 74 A Tc=25℃ 2
Continuous Drain Current ID 50 A Tc=100℃ 2
Pulsed Drain Current IDM 150 A 2
Single Pulse Avalanche Energy EAS 1805 mJ VDD=50V,VGS=10V,L=10mH,RG=25Ω 2
Power Dissipation PD 312 W Tc=25℃ 2
Power Dissipation PD 156 W Tc=100℃ 2
Storage Temperature Range TSTG -55 175 ℃ 2
Operating Junction Temperature Range TJ -55 175 ℃ 2
Thermal Resistance Junction-Case RθJC 0.51 ℃/W 2
Gate Threshold Voltage VGS(th) 1.8 V VGS=VDS, ID=5mA, Tj=175℃ 2
Static Drain-Source On-Resistance RDS(ON) 69 mΩ VGS=18V, ID=20A, Tj=175℃ 2
Input Capacitance Ciss 2975 pF VDS=1000V, VGS=0V, f=100KHz 2
Output Capacitance Coss 119 pF VDS=1000V, VGS=0V, f=100KHz 2
Reverse Transfer Capacitance Crss 12 pF VDS=1000V, VGS=0V, f=100KHz 2
Total Gate Charge Qg 117 nC VDS=800V, VGS=-4/+18V, ID=40A 2
Gate-Source Charge Qgs 38 nC VDS=800V, VGS=-4/+18V, ID=40A 2
Gate-Drain Charge Qgd 27 nC VDS=800V, VGS=-4/+18V, ID=40A 2
Turn-On Delay Time Td(on) 18 ns VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω 2
Rise Time Tr 21 ns VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω 2
Turn-Off Delay Time Td(off) 31 ns VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω 2
Fall Time Tf 9 ns VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω 2
Turn-On Energy Eon 485 μJ VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω 2
Turn-Off Energy Eoff 75 μJ VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω 2
Total Switching Loss Etot 253 μJ VDS=800V, VGS=-4/+18V, ID=40A, RG=4.5Ω 2
Diode Forward Voltage VSD 5 V VGS=-4V, ISD=20A, TJ=25℃ 2
Diode Forward Voltage VSD 4.4 V VGS=-4V, ISD=20A, TJ=175℃ 2
Continuous Diode Forward Current IS 45 A VGS=-4V, Tc=25°C 2
Continuous Diode Forward Current IS 25 A VGS=-4V, Tc=100°C 2
Reverse Recovery Time trr 19 ns VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/μs 2
Reverse Recovery Charge Qrr 500 nC VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/μs 2
Peak Reverse Recovery Current Irrm 50 A VGS=-4V, ISD=20A, VR=800V, di/dt=3900A/μs 2

CAD (KiCad official)

  • Symbol: SP50N120CTF
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3L (KiCad packages3D, STEP)
  • 3D model files: sp50n120ctf-etched.step / sp50n120ctf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp50n120ctf.step / sp50n120ctf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (9 pp, sha256 8c85d9fb76b61f7a, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF