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SP35N120CTF

Siliup · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3L

SP35N120CTF from Siliup, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; recommended gate-source drive is -5/+18 V, with absolute maximum VGS of -10/+22 V.
2 D passive Drain; rated for 1200 V drain-source voltage and 35 A continuous current at Tc=100℃ (65 A at Tc=25℃).
3 S passive Source; main current return terminal of the MOSFET, with pulsed drain current up to 130 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-247-3L
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 1200 V VGS=0V, ID=100uA 2
Drain-Source Leakage Current IDSS 5 100 uA VDS=1200V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS 100 nA VGS=-10/+22, VDS=0V, TJ=25℃ 2
Gate Threshold Voltage VGS(th) 2 3.1 4 V VGS=VDS, ID=10mA, Tj=25℃ 2
Static Drain-Source On-Resistance RDS(ON) 48 60 mΩ VGS=20V, ID=20A, Tj=25℃ 2
Static Drain-Source On-Resistance RDS(ON) 65 79 mΩ VGS=20V, ID=20A, Tj=175℃ 2
Diode Forward Voltage VSD 4.4 7 V VGS=-5V, ISD=20A, TJ=25℃ 2
Drain-Source Voltage VDS 1200 V Ta=25℃ 2
Gate-Source Voltage VGSMAX -10 22 V Ta=25℃ 2
Recommend Gate-Source Voltage VGSop -5 18 V 2
Continuous Drain Current ID 65 A Tc=25℃ 2
Continuous Drain Current ID 35 A Tc=100℃ 2
Pulsed Drain Current IDM 130 A 2
Total Power Dissipation PD 327 W Tc=25℃ 2
Thermal Resistance Junction-Case RθJC 0.4 ℃/W 2
Storage Temperature Range TSTG -55 175 ℃ 2
Operating Junction Temperature Range TJ -55 175 ℃ 2
Gate Threshold Voltage VGS(th) 2.1 V VGS=VDS, ID=10mA, Tj=175℃ 2
Input Capacitance Ciss 2560 pF VDS=800V, VGS=0V, f=1MHz 2
Output Capacitance Coss 121 pF VDS=800V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 8 pF VDS=800V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 124 nC VDS=800V, VGS=-5/+18V, ID=20A 2
Gate-Source Charge Qgs 25 nC VDS=800V, VGS=-5/+18V, ID=20A 2
Gate-Drain Charge Qgd 47 nC VDS=800V, VGS=-5/+18V, ID=20A 2
Turn-On Delay Time Td(on) 10.2 ns VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω 2
Rise Time Tr 28.6 ns VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω 2
Turn-Off Delay Time Td(off) 42.2 ns VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω 2
Fall Time Tf 14 ns VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω 2
Turn-On Energy Eon 721 uJ VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω 2
Turn-Off Energy Eoff 118.6 uJ VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω 2
Total Switching Loss Etot 832.6 uJ VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω 2
Diode Forward Voltage VSD 3.8 V VGS=-5V, ISD=20A, TJ=175℃ 2
Reverse Recovery Time trr 19.4 ns VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/μs 2
Reverse Recovery Charge Qrr 0.16 nC VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/μs 2
Peak Reverse Recovery Current Irrm 24.4 A VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/μs 2
Reverse Recovery Energy Erec 17.1 μJ VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/μs 2

CAD (KiCad official)

  • Symbol: SP35N120CTF
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3L (KiCad packages3D, STEP)
  • 3D model files: sp35n120ctf-etched.step / sp35n120ctf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp35n120ctf.step / sp35n120ctf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (6 pp, sha256 7bd7e72d59fff4a1, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF