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SP35N120CTF
Public Made by Adomby adom
Siliup Silicon Carbide Field Effect Transistor (MOSFET), TO-247-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSP35N120CTF
Siliup · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-3L
SP35N120CTF from Siliup, in a TO-247-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; recommended gate-source drive is -5/+18 V, with absolute maximum VGS of -10/+22 V. |
| 2 | D | passive | Drain; rated for 1200 V drain-source voltage and 35 A continuous current at Tc=100℃ (65 A at Tc=25℃). |
| 3 | S | passive | Source; main current return terminal of the MOSFET, with pulsed drain current up to 130 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-247-3L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 1200 | V | VGS=0V, ID=100uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | 100 | uA | VDS=1200V, VGS=0V, TJ=25℃ | 2 | |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=-10/+22, VDS=0V, TJ=25℃ | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 3.1 | 4 | V | VGS=VDS, ID=10mA, Tj=25℃ | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 48 | 60 | mΩ | VGS=20V, ID=20A, Tj=25℃ | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 65 | 79 | mΩ | VGS=20V, ID=20A, Tj=175℃ | 2 | |
| Diode Forward Voltage | VSD | 4.4 | 7 | V | VGS=-5V, ISD=20A, TJ=25℃ | 2 | |
| Drain-Source Voltage | VDS | 1200 | V | Ta=25℃ | 2 | ||
| Gate-Source Voltage | VGSMAX | -10 | 22 | V | Ta=25℃ | 2 | |
| Recommend Gate-Source Voltage | VGSop | -5 | 18 | V | 2 | ||
| Continuous Drain Current | ID | 65 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current | ID | 35 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 130 | A | 2 | |||
| Total Power Dissipation | PD | 327 | W | Tc=25℃ | 2 | ||
| Thermal Resistance Junction-Case | RθJC | 0.4 | ℃/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.1 | V | VGS=VDS, ID=10mA, Tj=175℃ | 2 | ||
| Input Capacitance | Ciss | 2560 | pF | VDS=800V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 121 | pF | VDS=800V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 8 | pF | VDS=800V, VGS=0V, f=1MHz | 2 | ||
| Total Gate Charge (4.5V) | Qg | 124 | nC | VDS=800V, VGS=-5/+18V, ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 25 | nC | VDS=800V, VGS=-5/+18V, ID=20A | 2 | ||
| Gate-Drain Charge | Qgd | 47 | nC | VDS=800V, VGS=-5/+18V, ID=20A | 2 | ||
| Turn-On Delay Time | Td(on) | 10.2 | ns | VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω | 2 | ||
| Rise Time | Tr | 28.6 | ns | VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω | 2 | ||
| Turn-Off Delay Time | Td(off) | 42.2 | ns | VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω | 2 | ||
| Fall Time | Tf | 14 | ns | VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω | 2 | ||
| Turn-On Energy | Eon | 721 | uJ | VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω | 2 | ||
| Turn-Off Energy | Eoff | 118.6 | uJ | VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω | 2 | ||
| Total Switching Loss | Etot | 832.6 | uJ | VDS=800V, VGS=-5/+18V, ID=20A, RG=10Ω | 2 | ||
| Diode Forward Voltage | VSD | 3.8 | V | VGS=-5V, ISD=20A, TJ=175℃ | 2 | ||
| Reverse Recovery Time | trr | 19.4 | ns | VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 0.16 | nC | VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/μs | 2 | ||
| Peak Reverse Recovery Current | Irrm | 24.4 | A | VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/μs | 2 | ||
| Reverse Recovery Energy | Erec | 17.1 | μJ | VGS=-5V/+18V, ISD=20A, VR=800V, di/dt=1000A/μs | 2 |
CAD (KiCad official)
- Symbol:
SP35N120CTF - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3L (KiCad packages3D, STEP)
- 3D model files:
sp35n120ctf-etched.step/sp35n120ctf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp35n120ctf.step/sp35n120ctf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (6 pp, sha256
7bd7e72d59fff4a1, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).