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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	23d ago
viewers	sp3400t2: viewers · Ray	23d ago
package.json	Publish 0.1.0 · Ray	23d ago
page.json	Set visibility: public · Ray	23d ago
README.md	Publish 0.1.0 · Ray	23d ago
sp3400t2-etched.glb	Publish 0.1.0 · Ray	23d ago
sp3400t2-etched.step	sp3400t2: factory component page (tier=lcsc) · Ray	23d ago
sp3400t2-hero.glb	sp3400t2: hero GLB from the etched model (keeps the MPN mark) · Ray	23d ago
sp3400t2-hero.overlay.json	Publish 0.1.0 · Ray	23d ago
sp3400t2.glb	Publish 0.1.0 · Ray	23d ago
sp3400t2.kicad_mod	Publish 0.1.0 · Ray	23d ago
sp3400t2.kicad_sym	Publish 0.1.0 · Ray	23d ago
sp3400t2.lbr	Publish 0.1.0 · Ray	23d ago
sp3400t2.step	Publish 0.1.0 · Ray	23d ago

SP3400T2

Siliup · MOSFETs · SOT-23

SP3400T2 from Siliup, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage limited to ±12 V absolute maximum, with threshold of 0.6 to 1.3 V at VDS=VGS, ID=250µA.
2	S	passive	Source; source terminal of the N-channel MOSFET, with continuous drain current rating of 5.8 A.
3	D	passive	Drain; drain-source voltage rated 30 V maximum with 5.8 A continuous (23.2 A pulsed) drain current.

Key specifications

Parameter	Value
Manufacturer	Siliup
Package	SOT-23
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			30	V		2
Gate-Source Voltage	VGSS	-12		12	V		2
Continuous Drain Current	ID			5.8	A		2
Pulse Drain Current	IDM			23.2	A	Tested	2
Power Dissipation	PD			1.3	W		2
Thermal Resistance Junction-to-Ambient	RθJA			96	°C/W		2
Storage Temperature Range	TSTG	-55		150	°C		2
Operating Junction Temperature Range	TJ	-55		150	°C		2
Drain-Source Breakdown Voltage	BVDSS	30			V	VGS=0V, ID=250µA	2
Drain-Source Leakage Current	IDSS			1	uA	VDS=24V, VGS=0V	2
Gate-Source Leakage Current	IGSS	-100		100	nA	VGS=±12V, VDS=0V	2
Gate Threshold Voltage	VGS(th)	0.6	0.95	1.3	V	VDS=VGS, ID=250µA	2
Static Drain-Source On-Resistance	RDS(ON)		25	35	mΩ	VGS=10V, ID=5.8A	2
Static Drain-Source On-Resistance	RDS(ON)		30	40	mΩ	VGS=4.5V, ID=5A	2
Static Drain-Source On-Resistance	RDS(ON)		40	50	mΩ	VGS=2.5V, ID=4A	2
Diode Forward Voltage	VSD			1.2	V	VGS=0V, IS=1A, TJ=25℃	2
Input Capacitance	Ciss		765		pF	VDS=15V, VGS=0V, f=1MHz	2
Output Capacitance	Coss		68		pF		2
Reverse Transfer Capacitance	Crss		53		pF		2
Total Gate Charge	Qg		18		nC	VDS=15V, VGS=10V, ID=3A	2
Gate-Source Charge	Qgs		3		nC		2
Gate-Drain Charge	Qgd		2.2		nC		2
Turn-On Delay Time	td(on)		5		nS	VDD=15V, VGS=10V, RG=3Ω, ID=3A	2
Turn-On Rise Time	tr		11		nS		2
Turn-Off Delay Time	td(off)		25		nS		2
Turn-Off Fall Time	tf		3		nS		2

CAD (KiCad official)

Symbol: SP3400T2
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23 (KiCad packages3D, STEP)
3D model files: sp3400t2-etched.step / sp3400t2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp3400t2.step / sp3400t2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Siliup datasheet (5 pp, sha256 418e0be15f446886, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF