# SP30N02AGTH

**Siliup** · MOSFETs · TO-252

SP30N02AGTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; the gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET; drain-source voltage is rated at 30 V and continuous drain current at 100 A (TC=25℃). |
| 3 | S | passive | Source of the MOSFET; maximum body-diode continuous current IS is rated at 150 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 2 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current | ID |  |  | 100 | A | TC=25℃ | 2 |
| Continuous Drain Current | ID |  |  | 66.6 | A | TC=100℃ | 2 |
| Pulsed Drain Current | IDM |  |  | 400 | A |  | 2 |
| Single Pulse Avalanche Energy | EAS |  |  | 441 | mJ | VDD=15V, VGS=10V, L=0.5mH, RG=25Ω (note 1) | 2 |
| Power Dissipation | PD |  |  | 100 | W | TC=25℃ | 2 |
| Thermal Resistance Junction-to-Case | RθJC |  |  | 1.25 | ℃/W |  | 2 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 2 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 2.6 | 3.3 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 3.7 | 5 | mΩ | VGS=4.5V, ID=20A | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 150 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `SP30N02AGTH`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `sp30n02agth-etched.step` / `sp30n02agth-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sp30n02agth.step` / `sp30n02agth.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Siliup datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603376500145987584) (5 pp, sha256 `01edee7d1d08cad0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sp30n02agth-datasheet.pdf)