component
SP30N02AGTH
Public Made by Adomby adom
Siliup MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSP30N02AGTH
Siliup · MOSFETs · TO-252
SP30N02AGTH from Siliup, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MOSFET; the gate-source voltage is rated at ±20 V in the absolute maximum ratings. |
| 2 | D | passive | Drain of the MOSFET; drain-source voltage is rated at 30 V and continuous drain current at 100 A (TC=25℃). |
| 3 | S | passive | Source of the MOSFET; maximum body-diode continuous current IS is rated at 150 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 100 | A | TC=25℃ | 2 | ||
| Continuous Drain Current | ID | 66.6 | A | TC=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 400 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 441 | mJ | VDD=15V, VGS=10V, L=0.5mH, RG=25Ω (note 1) | 2 | ||
| Power Dissipation | PD | 100 | W | TC=25℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 1.25 | ℃/W | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=24V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.6 | 3.3 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.7 | 5 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=1A, TJ=25℃ | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 150 | A | 2 |
CAD (KiCad official)
- Symbol:
SP30N02AGTH - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sp30n02agth-etched.step/sp30n02agth-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp30n02agth.step/sp30n02agth.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
01edee7d1d08cad0, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).