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SP010N04AGHTD

Public Made by Adom

by adom

Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SP010N04AGHTD

Siliup · MOSFETs · TO-263

SP010N04AGHTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin of the N-channel MOSFET, with gate-source voltage rated ±20 V and threshold of 2.6 to 3.4 V at 250 uA.
2 D passive Drain pin, rated for 100 V drain-source voltage and 130 A continuous current at Tc=25℃ (520 A pulsed).
3 S passive Source pin, carrying up to 130 A continuous current at Tc=25℃ and body-diode continuous current of 130 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current ID 130 A Tc=25℃ 2
Continuous Drain Current ID 87 A Tc=100℃ 2
Pulsed Drain Current IDM 520 A 2
Single Pulse Avalanche Energy EAS 841 mJ VDD=50V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation PD 180 W Tc=25℃ 2
Power Dissipation PD 72 W Tc=100℃ 2
Thermal Resistance Junction-to-Case RθJC 0.69 ℃/W 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Drain Cut-Off Current IDSS 1 uA VDS=80V, VGS=0V, TJ=25℃ 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2.6 3 3.4 V VGS=VDS, ID=250uA 2
Drain-Source ON Resistance RDS(ON) 3.9 5.2 mΩ VGS=10V, ID=30A 2
Source-Drain Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 130 A 2
Gate Resistance RG 2.8 Ω f=1MHz 2
Input Capacitance Ciss 4251 pF VDS=50V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 692 pF VDS=50V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 26 pF VDS=50V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 69 nC VDS=50V, VGS=10V, ID=20A 2
Gate-Source Charge Qgs 24 nC VDS=50V, VGS=10V, ID=20A 2
Gate-Drain Charge Qgd 18 nC VDS=50V, VGS=10V, ID=20A 2
Gate Plateau Voltage Vplateau 5.6 V VDS=50V, VGS=10V, ID=20A 2
Turn-On Delay Time td(on) 12 nS VGS=10V, VDS=50V, RL=2.5Ω, RG=3.0Ω 2
Rise Time tr 23 nS VGS=10V, VDS=50V, RL=2.5Ω, RG=3.0Ω 2
Turn-Off Delay Time td(off) 37 nS VGS=10V, VDS=50V, RL=2.5Ω, RG=3.0Ω 2
Fall Time tf 16 nS VGS=10V, VDS=50V, RL=2.5Ω, RG=3.0Ω 2
Reverse Recovery Time Trr 65 nS IS=20A, di/dt=100A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 126 nC IS=20A, di/dt=100A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP010N04AGHTD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: sp010n04aghtd-etched.step / sp010n04aghtd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp010n04aghtd.step / sp010n04aghtd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (8 pp, sha256 09c7baa8ba7938c6, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF