# SN7002IXTSA1

**Infineon Technologies** · MOSFETs · SOT-23

SN7002IXTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel enhancement MOSFET, with gate-source voltage VGS rated from -20 V to 20 V. |
| 2 | Source | passive | Source terminal, the reference for the gate-source voltage rating of -20 V to 20 V and the drain-source voltage VDS rating of 60 V. |
| 3 | Drain | passive | Drain terminal, rated for VDS of 60 V with continuous drain current ID of 0.20 A at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 0.2 | A | VGS=10V,TA=25°C | 3 |
| Continuous drain current | ID |  |  | 0.16 | A | VGS=4.5V,TA=70°C | 3 |
| Pulsed drain current | ID,pulse |  |  | 0.8 | A | TA=25°C | 3 |
| Reverse diode dv/dt | dv/dt |  |  | 6 | kV/µs | ID=0.2A,VDS=48V,di/dt=200A/µs,Tj,max=150°C | 3 |
| Gate source voltage | VGS | -20 |  | 20 | V | - | 3 |
| Power dissipation | Ptot |  |  | 0.36 | W | TA=25°C,RthJA=350°C/W | 3 |
| Operating and storage temperature | Tj,Tstg | -55 |  | 150 | °C | - | 3 |
| Thermal resistance, junction - ambient, minimum footprint | RthJA |  |  | 350 | K/W | - | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | VGS=0V,ID=250µA | 3 |
| Gate threshold voltage | VGS(th) | 0.8 | 1.4 | 1.8 | V | VDS=VGS,ID=26µA | 3 |
| Zero gate voltage drain current | IDSS |  |  | 0.1 | µA | VDS=60V,VGS=0V,Tj=25°C | 3 |
| Zero gate voltage drain current | IDSS |  |  | 5 | µA | VDS=60V,VGS=0V,Tj=125°C | 3 |
| Gate-source leakage current | IGSS |  |  | 10 | nA | VGS=20V,VDS=0V | 3 |
| Drain-source on-state resistance | RDS(on) |  | 2.3 | 5 | Ω | VGS=10V,ID=0.5A | 3 |
| Drain-source on-state resistance | RDS(on) |  | 3.5 | 7.5 | Ω | VGS=4.5V,ID=0.17A | 3 |
| Transconductance | gfs | 0.09 | 0.17 |  | S | /VDS/≥2/ID/RDS(on)max,ID=0.16A | 3 |
| Diode continuous forward current | IS |  |  | 0.2 | A | TA=25°C | 4 |
| Diode pulse current | IS,pulse |  |  | 0.8 | A | TA=25°C | 4 |
| Diode forward voltage | VSD |  | 0.83 | 1.2 | V | VGS=0V,IF=0.2A,Tj=25°C | 4 |
| Reverse recovery time | trr |  | 14.2 | 21.3 | ns | VR=30V,IF=0.2A,diF/dt=100A/µs | 4 |
| Reverse recovery charge | Qrr |  | 5.9 | 8.8 | nC | VR=30V,IF=0.2A,diF/dt=100A/µs | 4 |

## CAD (KiCad official)

- Symbol: `SN7002IXTSA1`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `sn7002ixtsa1-etched.step` / `sn7002ixtsa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sn7002ixtsa1.step` / `sn7002ixtsa1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/sn7002ixtsa1-datasheet.pdf) (10 pp, sha256 `5896493618cdd938`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sn7002ixtsa1-datasheet.pdf)