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SN7002IXTSA1

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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SN7002IXTSA1

Infineon Technologies · MOSFETs · SOT-23

SN7002IXTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement MOSFET, with gate-source voltage VGS rated from -20 V to 20 V.
2 Source passive Source terminal, the reference for the gate-source voltage rating of -20 V to 20 V and the drain-source voltage VDS rating of 60 V.
3 Drain passive Drain terminal, rated for VDS of 60 V with continuous drain current ID of 0.20 A at TA=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 0.2 A VGS=10V,TA=25°C 3
Continuous drain current ID 0.16 A VGS=4.5V,TA=70°C 3
Pulsed drain current ID,pulse 0.8 A TA=25°C 3
Reverse diode dv/dt dv/dt 6 kV/µs ID=0.2A,VDS=48V,di/dt=200A/µs,Tj,max=150°C 3
Gate source voltage VGS -20 20 V - 3
Power dissipation Ptot 0.36 W TA=25°C,RthJA=350°C/W 3
Operating and storage temperature Tj,Tstg -55 150 °C - 3
Thermal resistance, junction - ambient, minimum footprint RthJA 350 K/W - 3
Drain-source breakdown voltage V(BR)DSS 60 V VGS=0V,ID=250µA 3
Gate threshold voltage VGS(th) 0.8 1.4 1.8 V VDS=VGS,ID=26µA 3
Zero gate voltage drain current IDSS 0.1 µA VDS=60V,VGS=0V,Tj=25°C 3
Zero gate voltage drain current IDSS 5 µA VDS=60V,VGS=0V,Tj=125°C 3
Gate-source leakage current IGSS 10 nA VGS=20V,VDS=0V 3
Drain-source on-state resistance RDS(on) 2.3 5 Ω VGS=10V,ID=0.5A 3
Drain-source on-state resistance RDS(on) 3.5 7.5 Ω VGS=4.5V,ID=0.17A 3
Transconductance gfs 0.09 0.17 S /VDS/≥2/ID/RDS(on)max,ID=0.16A 3
Diode continuous forward current IS 0.2 A TA=25°C 4
Diode pulse current IS,pulse 0.8 A TA=25°C 4
Diode forward voltage VSD 0.83 1.2 V VGS=0V,IF=0.2A,Tj=25°C 4
Reverse recovery time trr 14.2 21.3 ns VR=30V,IF=0.2A,diF/dt=100A/µs 4
Reverse recovery charge Qrr 5.9 8.8 nC VR=30V,IF=0.2A,diF/dt=100A/µs 4

CAD (KiCad official)

  • Symbol: SN7002IXTSA1
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: sn7002ixtsa1-etched.step / sn7002ixtsa1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sn7002ixtsa1.step / sn7002ixtsa1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 5896493618cdd938, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF