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SN65MLVD204BDR
Public Made by Adomby adom
Texas Instruments Pre-ordered Chips, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSN65MLVD204BDR
Texas Instruments · Pre-ordered Chips · SOIC-8
SN65MLVD204BDR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | R | output | Receiver output pin. |
| 2 | RE | input | Receiver enable pin; High = Disable, Low = Enable. |
| 3 | DE | input | Driver enable pin; High = Enable, Low = Disable. |
| 4 | D | input | Driver input pin. |
| 5 | GND | power_in | Power supply ground. |
| 6 | A | bidirectional | Differential I/O bus terminal A; voltage at any bus terminal is limited to -1.4 V to 3.8 V per the recommended operating conditions. |
| 7 | B | bidirectional | Differential I/O bus terminal B; voltage at any bus terminal is limited to -1.4 V to 3.8 V per the recommended operating conditions. |
| 8 | VCC | power_in | Power supply pin, 3.3 V nominal (3 V to 3.6 V recommended). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Interface ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage, VCC | VCC | 3 | 3.3 | 3.6 | V | 6 | |
| High-level input voltage | VIH | 2 | V | 6 | |||
| Low-level input voltage | VIL | 0 | 0.8 | V | 6 | ||
| Voltage at any bus terminal VA or VB | VA, VB | -1.4 | 3.8 | V | 6 | ||
| Differential load resistance | RL | 30 | 50 | Ω | 6 | ||
| Signaling rate | 1/tUI | 100 | Mbps | 6 | |||
| Operating free-air temperature for D package | TA | -40 | 85 | °C | 6 | ||
| Supply voltage range | VCC | -0.5 | 4 | V | 6 | ||
| Input voltage range D, DE, RE | -0.5 | 4 | V | 6 | |||
| Input voltage range A, B | -1.8 | 4 | V | 6 | |||
| Output voltage range R | -0.3 | 4 | V | 6 | |||
| Output voltage range A, B | -1.8 | 4 | V | 6 | |||
| Storage temperature | Tstg | -65 | 150 | °C | 6 | ||
| Supply current, driver only | ICC | 13 | 22 | mA | RE and DE at VCC, RL = 50 Ω, All others open | 7 | |
| Supply current, both disabled | ICC | 1 | 4 | mA | RE at VCC, DE at 0 V, RL = No Load, All others open | 7 | |
| Supply current, both enabled | ICC | 16 | 24 | mA | RE at 0 V, DE at VCC, RL = 50 Ω, All others open | 7 | |
| Supply current, receiver only | ICC | 4 | 13 | mA | RE at 0 V, DE at 0 V, All others open | 7 | |
| Device power dissipation | PD | 100 | mW | RL = 50 Ω, Input to D is a 50-MHz 50% duty cycle square wave, DE = high, RE = low, TA = 85°C | 7 | ||
| Differential output voltage magnitude | /VAB/ | 480 | 650 | mV | See Figure 7-2 | 7 | |
| Change in differential output voltage magnitude between logic states | Δ/VAB/ | -50 | 50 | mV | 7 | ||
| Steady-state common-mode output voltage | VOS(SS) | 0.8 | 1.2 | V | See Figure 7-3 | 7 | |
| Change in steady-state common-mode output voltage between logic states | ΔVOS(SS) | -50 | 50 | mV | 7 | ||
| Peak-to-peak common-mode output voltage | VOS(PP) | 150 | mV | 7 | |||
| Maximum steady-state open-circuit output voltage A | VA(OC) | 0 | 2.4 | V | See Figure 7-7 | 7 | |
| Maximum steady-state open-circuit output voltage B | VB(OC) | 0 | 2.4 | V | 7 | ||
| Voltage overshoot, low-to-high level output | VP(H) | 1.2 | VSS | See Figure 7-5 | 7 | ||
| Voltage overshoot, high-to-low level output | VP(L) | -0.2 | VSS | See Figure 7-5 | 7 | ||
| High-level input current (D, DE) | IIH | 0 | 10 | µA | VIH = 2 V to VCC | 7 | |
| Low-level input current (D, DE) | IIL | 0 | 10 | µA | VIL = GND to 0.8 V | 7 | |
| Differential short-circuit output current magnitude | /IOS/ | 24 | mA | See Figure 7-4 | 7 | ||
| High-level output voltage (R) | VOH | 2.4 | V | IOH = -8 mA | 8 | ||
| Low-level output voltage (R) | VOL | 0.4 | V | IOL = 8 mA | 8 | ||
| High-level input current (RE) | IIH | -10 | 0 | µA | VIH = 2 V to VCC | 8 | |
| Low-level input current (RE) | IIL | -10 | 0 | µA | VIL = GND to 0.8 V | 8 | |
| High-impedance output current (R) | IOZ | -10 | 15 | µA | VO = 0 V or 3.6 V | 8 | |
| Receiver or transceiver with driver disabled input current IA | IA | 0 | 32 | µA | VA = 3.8 V, VB = 1.2 V | 8 | |
| Receiver or transceiver with driver disabled input current IA | IA | -20 | 20 | µA | VA = 0 V or 2.4 V, VB = 1.2 V | 8 | |
| Receiver or transceiver with driver disabled input current IA | IA | -32 | 0 | µA | VA = -1.4 V, VB = 1.2 V | 8 | |
| Receiver or transceiver with driver disabled differential input current (IA, IB) | IAB | -4 | 4 | µA | VA = VB, 1.4 ≤ VA ≤ 3.8 V | 8 | |
| Transceiver with driver disabled input capacitance CA | CA | 12 | pF | VB = 1.2 V | 8 | ||
| Transceiver with driver disabled input capacitance CB | CB | 12 | pF | VA = 1.2 V | 8 | ||
| Transceiver with driver disabled differential input capacitance | CAB | 7 | pF | 8 | |||
| Transceiver with driver disabled input capacitance balance (CA/CB) | CA/B | 0.99 | 1.01 | 8 | |||
| Propagation delay time, low-to-high-level output (driver) | tpLH | 2 | 2.5 | 3.5 | ns | See Figure 7-5 | 8 |
| Propagation delay time, high-to-low-level output (driver) | tpHL | 2 | 2.5 | 3.5 | ns | See Figure 7-5 | 8 |
| Differential output signal rise time | tr | 2 | ns | 9 | |||
| Differential output signal fall time | tf | 2 | ns | 9 | |||
| Pulse skew (/tpHL, tpLH/) | tsk(p) | 150 | ps | 9 | |||
| Part-to-part skew | tsk(pp) | 0.9 | ns | 9 | |||
| Propagation delay time, low-to-high-level output (receiver) | tPLH | 2 | 6 | 10 | ns | CL = 15 pF, See Figure 7-10 | 9 |
| Propagation delay time, high-to-low-level output (receiver) | tPHL | 2 | 6 | 10 | ns | CL = 15 pF, See Figure 7-10 | 9 |
| Junction-to-ambient thermal resistance (D SOIC) | RθJA | 112.2 | °C/W | 6 | |||
| Junction-to-case (top) thermal resistance (D SOIC) | RθJC(top) | 56.7 | °C/W | 6 | |||
| Junction-to-board thermal resistance (D SOIC) | RθJB | 52.8 | °C/W | 6 | |||
| Junction-to-top characterization parameter (D SOIC) | ψJT | 10.3 | °C/W | 6 | |||
| Junction-to-board characterization parameter (D SOIC) | ψJB | 52.3 | °C/W | 6 |
CAD (KiCad official)
- Symbol:
SN65MLVD204BDR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
sn65mlvd204bdr-etched.step/sn65mlvd204bdr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sn65mlvd204bdr.step/sn65mlvd204bdr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (54 pp, sha256
71566c73a87ab2a8, retrieved 2026-11-02, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).