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SN65HVD63RGTR

Texas Instruments · Pre-ordered Chips · QFN-16-EP(3x3)

SN65HVD63RGTR from Texas Instruments, in a QFN-16-EP(3x3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SYNCOUT output Open-drain output used to synchronize other devices to the 4x-carrier oscillator at XTAL1 and XTAL2, requiring a pullup of at least 1 kΩ to VCC.
2 TXIN input Digital data bit stream input to the driver, with logic-high input voltage of at least 70% VL and logic-low at most 30% VL.
3 VL power_in Logic supply voltage for the device, specified from 1.6 V to 5.5 V.
4 RXOUT output Digital data bit stream output from the receiver.
5 DIR output Direction control output signal for RS-485 bus arbitration, with its duration set by DIRSET1 and DIRSET2.
6 DIRSET2 input Bit that sets the DIR duration together with DIRSET1: [L:L] = 9.6 kbps, [L:H] = 38.4 kbps, [H:L] = 115 kbps, [H:H] = standby mode.
7 DIRSET1 input Bit that sets the DIR duration together with DIRSET2, with logic-high input voltage of at least 70% VL and logic-low at most 30% VL.
8 GND power_in Ground connection for the device.
9 RES input Input voltage that adjusts driver output power, set by external resistors from BIAS to GND, with a specified range of 0.7 V to 1.5 V.
10 BIAS output Bias voltage output for setting driver output power through external resistors, requiring 1 µF capacitance to GND.
11 RXIN input Modulated input signal to the receiver, with a maximum amplitude of 1.12 Vpp.
12 TXOUT output Modulated output signal from the driver, delivering 0 dBm to 6 dBm into a 50-Ω load.
13 VCC power_in Analog supply voltage for the device, specified from 3 V to 5.5 V.
14 XTAL1 bidirectional I/O pin of the crystal oscillator; connect a 4 × fC crystal between XTAL1 and XTAL2, or connect XTAL1 to an 8.704-MHz clock with XTAL2 tied to GND.
15 XTAL2 bidirectional I/O pin of the crystal oscillator; connect a 4 × fC crystal between XTAL1 and XTAL2, or tie XTAL2 to GND when XTAL1 is driven by an 8.704-MHz clock.
16 GND power_in Ground connection for the device.
17 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package QFN-16-EP(3x3)
Category Interface ICs
Pins 17

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage, VCC and VL VCC, VL -0.5 6 V 4
Voltage at coax pins -0.5 6 V 4
Voltage at logic pins -0.3 V maximum printed as VVL + 0.3 4
Logic output current -20 20 mA 4
Junction temperature TJ 170 °C 4
Storage temperature Tstg -65 150 °C 4
Analog supply voltage VCC 3 5.5 V 4
Logic supply voltage VL 1.6 5.5 V 4
Input signal amplitude at RXIN VI(pp) 1.12 Vpp 4
High-level input voltage (TXIN, DIRSET1, DIRSET2) VIH 70 %VL maximum printed as VL 4
High-level input voltage (XTAL1, XTAL2) VIH 70 %VCC maximum printed as VCC 4
Low-level input voltage (TXIN, DIRSET1, DIRSET2) VIL 0 30 %VL 4
Low-level input voltage (XTAL1, XTAL2) VIL 0 30 %VCC 4
Data signaling rate 1/tUI 9.6 115 kbps 4
Oscillator frequency tolerance FOSC -30 30 ppm nominal 8.704 MHz 4
Voltage at RES pin VRES 0.7 1.5 V 4
Operating free-air temperature TA -40 105 °C 4
Junction temperature (operating) TJ -40 125 °C 4
Supply current, TXIN = L (active) ICC 28 33 mA DIRSET1 = L, DIRSET2 = H; TXIN = L (active) 6
Supply current, TXIN = H (quiescent) ICC 25 31 mA DIRSET1 = L, DIRSET2 = H; TXIN = H (quiescent) 6
Supply current, TXIN = 115 kbps ICC 27 33 mA TXIN = 115 kbps, 50% duty cycle 6
Supply current, standby ICC 12 17 mA DIRSET1 = H, DIRSET2 = H (standby) 6
Logic supply current IVL 50 µA TXIN = H, RXIN = DC input 6
Receiver power supply rejection ratio PSRR 45 60 dB VTXIN = VL 6
High-level logic output voltage (RXOUT, DIR) VOH 90 %VL IOH = -4 mA for VL > 2.4 V; IOH = -2 mA for VL < 2.4 V 6
Low-level logic output voltage (RXOUT, DIR) VOL 10 %VL IOL = 4 mA for VL > 2.4 V; IOL = 2 mA for VL < 2.4 V 6
Peak-to-peak output voltage at device pin TXOUT VO(PP) 2.24 2.5 VPP VRES = 1.5 V (Maximum setting) 6
Peak-to-peak output voltage at device pin TXOUT VO(PP) 1.17 1.3 VPP VRES = 0.7 V (Minimum setting) 6
Peak-to-peak voltage at coax out VO(PP) 5 6 dBm VRES = 1.5 V 6
Peak-to-peak voltage at coax out VO(PP) -0.6 0.3 dBm VRES = 0.7 V 6
Off-state output voltage VO(OFF) 1 mVpp At TXOUT 6
Output frequency variation Δf -100 100 ppm 6
Short-circuit output current IOS 300 450 mA TXOUT short-circuit 6
Input threshold VIT 79 112 158 mVPP fIN = 2.176 MHz 6
Input impedance ZIN 11 21 kΩ f = fO 6
Passband fPB 1.1 4.17 MHz VRXIN = 1.12VP_P 6
Receiver rejection range fREJ 1.1 4.17 MHz 2.176-MHz carrier amplitude of 112.4 mVPP, frequency band of spurious components with 800 mVPP allowed 6
Input leakage current II -15 15 µA XTAL1, XTAL2, 0V < VIN < VCC 6
Output low voltage SYNCOUT VOL 0.4 V with 1-kΩ resistor from SYNCOUT to VCC 6
Coax driver propagation delay tpAQ, tpQA 5 µs See Figure 19 7
Coax receiver output rise/fall time tr, tf 20 ns CL = 15 pF, RL = 1 kΩ; see Figure 19 7
Receiver propagation delay tPHL, tPLH 5.5 11 µs See Figure 20 7
Coax receiver output duty cycle 40 60 % VRXIN(ON) = 630 mVpp, VRXIN(OFF) < 5 mVpp, 50% duty cycle 7
Direction control skew (DIR to RXOUT) tDIRSKEW 270 ns DIR to RXOUT 7
Transmitter output impedance ZO 0.03 Ω At 100 kHz 6
Output frequency fO 2.176 MHz 6
Direction control active duration tDIR 1667 µs DIRSET2 = GND or OPEN, DIRSET1 = GND or OPEN 7
Direction control active duration tDIR 417 µs DIRSET2 = GND, DIRSET1 = VL 7
Direction control active duration tDIR 137 µs DIRSET2 = VL, DIRSET1 = VL 7
Receiver noise filter time (slow bit rate) tnoise filter 4 µs DIRSET for 9.6 kbps 6
Receiver noise filter time (fast bit rate) tnoise filter 2 µs DIRSET for > 9.6 kbps 6
Bias resistor between BIAS and RES R1 4.1 kΩ 4
Bias resistor between RES and GND R2 10 kΩ 4
Pullup resistor between SYNCOUT and VCC RSYNC 1 kΩ 4
Coupling capacitance between RXIN and coax (channel) CC 220 nF 4
Capacitance between BIAS and GND CBIAS 1 µF 4
Load impedance between RXIN and GND at fC (channel) ZLOAD 50 Ω 4
Junction-to-ambient thermal resistance RθJA 49.4 °C/W 4
Junction-to-case (top) thermal resistance RθJCtop 64.2 °C/W 5
Junction-to-board thermal resistance RθJB 22.9 °C/W 5
Junction-to-case (bottom) thermal resistance RθJCbot 25 °C/W 5

CAD (KiCad official)

  • Symbol: SN65HVD63RGTR
  • Footprint: Package_DFN_QFN:QFN-16-1EP_3x3mm_P0.5mm_EP1.7x1.7mm
  • 3D model: QFN-16-EP(3x3) (KiCad packages3D, STEP)
  • 3D model files: sn65hvd63rgtr-etched.step / sn65hvd63rgtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sn65hvd63rgtr.step / sn65hvd63rgtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (28 pp, sha256 4ca34813818bf3d8, retrieved 2026-11-02, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF