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SN6505DQDBVRQ1
Public Made by Adomby adom
Texas Instruments Power Management - Specialized, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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SN6505DQDBVRQ1
Texas Instruments · Power Management - Specialized · SOT-23-6
SN6505DQDBVRQ1 from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | output | Open drain output of the first power MOSFETs, typically connected to the outer terminals of the center tap transformer, with external traces kept short because large currents flow through this pin. |
| 2 | VCC | power_in | Device supply pin that should be bypassed with a 4.7 μF or greater, low ESR capacitor, and an internal undervoltage lockout trips and turns both outputs off when VCC ≤ 2.25 V. |
| 3 | D2 | output | Open drain output of the second power MOSFETs, typically connected to the outer terminals of the center tap transformer, with external traces kept short because large currents flow through this pin. |
| 4 | GND | power_in | Ground connected to the source of the power MOSFET switches via an internal sense circuit, which must be connected to a low-inductance quality ground plane because large currents flow through it. |
| 5 | EN | input | Enable pin that turns the device on or off, where grounding or leaving it floating disables all internal circuitry and it should be tied directly to VCC if unused. |
| 6 | CLK | input | Clock input used to run the device with an external clock, internally pulled down to GND, and the device automatically shifts to internal clock if no valid clock is detected on this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-6 |
| Category | Power Management (PMIC) |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Supply voltage | VCC | -0.5 | 6 | V | 4 | ||
| Voltage on EN, CLK | EN, CLK | -0.5 | V | max VCC + 0.5 (footnote 3: must not exceed 6 V) | 4 | ||
| Output switch voltage | D1, D2 | 16 | V | 4 | |||
| Peak output switch current | I(D1)Pk, I(D2)Pk | 2.4 | A | 4 | |||
| Junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature range | Tstg | -65 | 150 | °C | 4 | ||
| ESD human-body model | V(ESD) | -6000 | 6000 | V | HBM, per AEC Q100-002 | 4 | |
| ESD charged-device model | V(ESD) | -1500 | 1500 | V | CDM, per AEC Q100-011 | 4 | |
| Supply voltage | VCC | 2.25 | 5.5 | V | 4 | ||
| Output switch current, primary side | ID1, ID2 | 0.75 | A | 2.25 V ≤ VCC ≤ 2.8 V | 4 | ||
| Output switch current, primary side | ID1, ID2 | 1 | A | 2.8 V < VCC ≤ 5.5 V | 4 | ||
| Ambient temperature | TA | -40 | 125 | °C | 4 | ||
| Supply current (SN6505B-Q1 and SN6505D-Q1) | I(Vcc) | 1.56 | 2.3 | mA | 2.8 V ≤ VCC ≤ 5.5 V; RL = 50 Ω | 5 | |
| Leakage current on EN and CLK pin | IIH | 10 | 20 | µA | EN / CLK = VCC | 5 | |
| D1, D2 average switching frequency (SN6505B-Q1 and SN6505D-Q1) | FSW | 363 | 424 | 517 | kHz | RL = 50 Ω to VCC; Refer to Figure 7-3. | 5 |
| External clock frequency on CLK pin (SN6505B-Q1 and SN6505D-Q1) | F(EXT) | 100 | 1600 | kHz | 5 | ||
| Output switch on resistance | R(ON) | 0.16 | 0.25 | Ω | VCC = 4.5 V, ID1, ID2 = 1 A | 5 | |
| Output switch on resistance | R(ON) | 0.19 | 0.31 | Ω | VCC = 2.8 V, ID1, ID2 = 1 A | 5 | |
| Output switch on resistance | R(ON) | 0.21 | 0.45 | Ω | VCC = 2.25 V, ID1, ID2 = 0.5 A | 5 | |
| Current clamp limit | ILIM | 1.42 | 1.75 | 2.15 | A | 2.8 V < VCC ≤ 5.5 V | 5 |
| Current clamp limit | ILIM | 0.65 | 1.85 | A | 2.25 V ≤ VCC ≤ 2.8 V | 5 | |
| TSD turn on temperature | TSD+ | 154 | 168 | 181 | °C | 5 | |
| TSD turn off temperature | TSD- | 135 | 150 | 166 | °C | 5 | |
| TSD hysteresis | TSD- | 13 | 17 | °C | 5 | ||
| Duration after which device switches to internal clock in case of invalid external clock | tCLKTIMER | 10 | 25 | µs | 6 | ||
| Power up time (2.25 V ≤ VCC < 3 V) | tPWRUP | 75 | 160 | µs | From EN=1 to full drive-current available at D1 and D2; 2.25 V ≤ VCC < 3 V | 6 | |
| Power up time (3 V ≤ VCC ≤ 5.5 V) | tPWRUP | 60 | 100 | µs | From EN=1 to full drive-current available at D1 and D2; 3 V ≤ VCC ≤ 5.5 V | 6 | |
| Power down time | tPWRDN | 1 | 5 | µs | From EN=0 to output MOSFETs off (no current on D1 and D2) | 6 | |
| Junction-to-ambient thermal resistance | RθJA | 137.7 | °C/W | 4 | |||
| Junction-to-case (top) thermal resistance | RθJC(top) | 57.7 | °C/W | 4 | |||
| Junction-to-board thermal resistance | RθJB | 46 | °C/W | 4 | |||
| Junction-to-top characterization parameter | ψJT | 13.4 | °C/W | 4 | |||
| Junction-to-board characterization parameter | ψJB | 44.9 | °C/W | 4 |
CAD (KiCad official)
- Symbol:
SN6505DQDBVRQ1 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
sn6505dqdbvrq1-etched.step/sn6505dqdbvrq1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sn6505dqdbvrq1.step/sn6505dqdbvrq1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (40 pp, sha256
3c8af11607815139, retrieved 2026-11-06, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).