component
SMUN5211DW1T1G
Public Made by Adomby adom
onsemi Digital Transistors, SOT-363. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSMUN5211DW1T1G
onsemi · Digital Transistors · SOT-363
SMUN5211DW1T1G from onsemi, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E2 | passive | Emitter of Q2, connected to the Q2 base through the R2 base-emitter resistor (10 kΩ). |
| 2 | B2 | input | Base (input) of Q2 through the series base resistor R1 (10 kΩ), with input forward voltage max 40 Vdc and input reverse voltage max 10 Vdc. |
| 3 | C1 | passive | Collector of Q1, with VCEO max 50 Vdc, VCBO max 50 Vdc and continuous IC max 100 mAdc. |
| 4 | E1 | passive | Emitter of Q1, connected to the Q1 base through the R2 base-emitter resistor (10 kΩ). |
| 5 | B1 | input | Base (input) of Q1 through the series base resistor R1 (10 kΩ), with input forward voltage max 40 Vdc and input reverse voltage max 10 Vdc. |
| 6 | C2 | passive | Collector of Q2, with VCEO max 50 Vdc, VCBO max 50 Vdc and continuous IC max 100 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | 100 | nAdc | VCB = 50 V, IE = 0 | 3 | ||
| Collector-Emitter Cutoff Current | ICEO | 500 | nAdc | VCE = 50 V, IB = 0 | 3 | ||
| Emitter-Base Cutoff Current | IEBO | 0.5 | mAdc | VEB = 6.0 V, IC = 0 | 3 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | Vdc | IC = 10 A, IE = 0 | 3 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | Vdc | IC = 2.0 mA, IB = 0 | 3 | ||
| DC Current Gain | hFE | 35 | 60 | IC = 5.0 mA, VCE = 10 V | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.25 | V | IC = 10 mA, IB = 0.3 mA | 3 | ||
| Output Voltage (On) | VOL | 0.2 | Vdc | VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k | 3 | ||
| Output Voltage (Off) | VOH | 4.9 | Vdc | VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k | 3 | ||
| Input Resistor R1 | R1 | 7 | 10 | 13 | k | 3 | |
| Resistor Ratio R1/R2 | R1/R2 | 0.8 | 1 | 1.2 | 3 | ||
| Collector-Base Voltage | VCBO | 50 | Vdc | 1 | |||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | 1 | |||
| Collector Current - Continuous | IC | 100 | mAdc | 1 | |||
| Input Forward Voltage | VIN(fwd) | 40 | Vdc | 1 | |||
| Input Reverse Voltage | VIN(rev) | 10 | Vdc | 1 | |||
| Total Device Dissipation, one junction heated | PD | 187 | mW | ONE JUNCTION HEATED; TA = 25°C (Note 1) | 2 | ||
| Total Device Dissipation, one junction heated | PD | 256 | mW | ONE JUNCTION HEATED; TA = 25°C (Note 2) | 2 | ||
| Derate above 25°C, one junction heated | 1.5 | mW/°C | ONE JUNCTION HEATED (Note 1) | 2 | |||
| Derate above 25°C, one junction heated | 2 | mW/°C | ONE JUNCTION HEATED (Note 2) | 2 | |||
| Thermal Resistance, Junction to Ambient, one junction heated | RJA | 670 | °C/W | ONE JUNCTION HEATED (Note 1) | 2 | ||
| Thermal Resistance, Junction to Ambient, one junction heated | RJA | 490 | °C/W | ONE JUNCTION HEATED (Note 2) | 2 | ||
| Total Device Dissipation, both junctions heated | PD | 250 | mW | BOTH JUNCTION HEATED; TA = 25°C (Note 1) | 2 | ||
| Total Device Dissipation, both junctions heated | PD | 385 | mW | BOTH JUNCTION HEATED; TA = 25°C (Note 2) | 2 | ||
| Derate above 25°C, both junctions heated | 2 | mW/°C | BOTH JUNCTION HEATED (Note 1) | 2 | |||
| Derate above 25°C, both junctions heated | 3 | mW/°C | BOTH JUNCTION HEATED (Note 2) | 2 | |||
| Thermal Resistance, Junction to Ambient, both junctions heated | RJA | 493 | °C/W | BOTH JUNCTION HEATED (Note 1) | 2 | ||
| Thermal Resistance, Junction to Ambient, both junctions heated | RJA | 325 | °C/W | BOTH JUNCTION HEATED (Note 2) | 2 | ||
| Thermal Resistance, Junction to Lead, both junctions heated | RJL | 188 | °C/W | BOTH JUNCTION HEATED (Note 1) | 2 | ||
| Thermal Resistance, Junction to Lead, both junctions heated | RJL | 208 | °C/W | BOTH JUNCTION HEATED (Note 2) | 2 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
SMUN5211DW1T1G - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
smun5211dw1t1g-etched.step/smun5211dw1t1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smun5211dw1t1g.step/smun5211dw1t1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (8 pp, sha256
8577f826838ffa78, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).