SMUN5114DW1T1G from onsemi, in a SOT-363-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	E2	passive	Emitter of transistor Q2 in the dual bias resistor transistor (BRT) network, with Q2's monolithic base resistor (R1 = 10 kΩ) and base-emitter resistor (R2 = 47 kΩ) integrated in the package.
2	B2	passive	Base (input) of transistor Q2, connected to the internal series base resistor R1 of the bias network.
3	C1	passive	Collector of transistor Q1 in the dual BRT network; common maximum ratings for Q1 and Q2 are VCEO 50 Vdc and IC 100 mAdc continuous.
4	E1	passive	Emitter of transistor Q1 in the dual BRT network, with its internal bias resistors integrated in the package.
5	B1	passive	Base (input) of transistor Q1, connected to the internal series base resistor R1 of the bias network.
6	C2	passive	Collector of transistor Q2 in the dual BRT network; common maximum ratings for Q1 and Q2 are VCEO 50 Vdc and IC 100 mAdc continuous.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-363-6
Category	Triode/MOS Tube/Transistor
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector−Base Cutoff Current	ICBO			100	nAdc	VCB = 50 V, IE = 0	3
Collector−Emitter Cutoff Current	ICEO			500	nAdc	VCE = 50 V, IB = 0	3
Emitter−Base Cutoff Current	IEBO			0.2	mAdc	VEB = 6.0 V, IC = 0	3
Collector−Base Breakdown Voltage	V(BR)CBO	50			Vdc	IC = 10 A, IE = 0	3
Collector−Emitter Breakdown Voltage	V(BR)CEO	50			Vdc	IC = 2.0 mA, IB = 0	3
DC Current Gain	hFE	80	140			IC = 5.0 mA, VCE = 10 V	3
Collector−Emitter Saturation Voltage	VCE(sat)			0.25	Vdc	IC = 10 mA, IB = 0.3 mA	3
Input Resistor	R1	7	10	13	k		3
Resistor Ratio	R1/R2	0.17	0.21	0.25			3
Output Voltage (on)	VOL			0.2	Vdc	VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k	3
Output Voltage (off)	VOH	4.9			Vdc	VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k	3
Collector−Base Voltage	VCBO			50	Vdc	TA = 25°C, common for Q1 and Q2	1
Collector−Emitter Voltage	VCEO			50	Vdc	TA = 25°C, common for Q1 and Q2	1
Collector Current − Continuous	IC			100	mAdc	TA = 25°C, common for Q1 and Q2	1
Input Forward Voltage	VIN(fwd)			40	Vdc	TA = 25°C, common for Q1 and Q2	1
Input Reverse Voltage	VIN(rev)			6	Vdc	TA = 25°C, common for Q1 and Q2	1
Total Device Dissipation, one junction heated	PD			187	mW	TA = 25°C (Note 1, FR-4 @ Minimum Pad)	2
Total Device Dissipation, one junction heated	PD			256	mW	TA = 25°C (Note 2, FR-4 @ 1.0 x 1.0 Inch Pad)	2
Derate above 25°C, one junction heated				1.5	mW/°C	Note 1, FR-4 @ Minimum Pad	2
Derate above 25°C, one junction heated				2	mW/°C	Note 2, FR-4 @ 1.0 x 1.0 Inch Pad	2
Thermal Resistance, Junction to Ambient, one junction heated	RJA			670	°C/W	Note 1, FR-4 @ Minimum Pad	2
Thermal Resistance, Junction to Ambient, one junction heated	RJA			490	°C/W	Note 2, FR-4 @ 1.0 x 1.0 Inch Pad	2
Total Device Dissipation, both junctions heated	PD			250	mW	Both junctions heated (Note 3); TA = 25°C (Note 1)	2
Total Device Dissipation, both junctions heated	PD			385	mW	Both junctions heated (Note 3); TA = 25°C (Note 2)	2
Derate above 25°C, both junctions heated				2	mW/°C	Both junctions heated (Note 3); Note 1	2
Derate above 25°C, both junctions heated				3	mW/°C	Both junctions heated (Note 3); Note 2	2
Thermal Resistance, Junction to Ambient, both junctions heated	RJA			493	°C/W	Both junctions heated (Note 3); Note 1	2
Thermal Resistance, Junction to Ambient, both junctions heated	RJA			325	°C/W	Both junctions heated (Note 3); Note 2	2
Thermal Resistance, Junction to Lead, both junctions heated	RJL			188	°C/W	Both junctions heated (Note 3); Note 1	2
Thermal Resistance, Junction to Lead, both junctions heated	RJL			208	°C/W	Both junctions heated (Note 3); Note 2	2
Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		2
Resistor R2 nominal value (from title)	R2		47		k		1

CAD (KiCad official)

Symbol: SMUN5114DW1T1G
Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
3D model: SOT-363-6 (KiCad packages3D, STEP)
3D model files: smun5114dw1t1g-etched.step / smun5114dw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smun5114dw1t1g.step / smun5114dw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (11 pp, sha256 97d44ee0af9229e2, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

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SMUN5114DW1T1G

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