# SMMBTA56LT3G

**onsemi** · Bipolar (BJT) · SOT-23

SMMBTA56LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet gives an emitter-base breakdown minimum of −4.0 Vdc and a base-emitter on voltage of −1.2 Vdc maximum at IC = −100 mAdc, VCE = −1.0 Vdc. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the absolute maximum emitter-base voltage VEBO is −4.0 Vdc. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; for the SMMBTA56 the absolute maximum collector-emitter voltage VCEO is −80 Vdc and the continuous collector current IC is −500 mAdc. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (MMBTA56, SMMBTA56 column) | V(BR)CEO | -80 |  |  | Vdc | IC = −1.0 mAdc, IB = 0 | 3 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -4 |  |  | Vdc | IE = −100 Adc, IC = 0 | 3 |
| Collector Cutoff Current | ICES |  |  | -0.1 | Adc | VCE = −60 Vdc, IB = 0 | 3 |
| Collector Cutoff Current (MMBTA56, SMMBTA56 column) | ICBO |  |  | -0.1 | Adc | VCB = −80 Vdc, IE = 0 | 3 |
| DC Current Gain | hFE | 100 |  |  |  | IC = −10 mAdc, VCE = −1.0 Vdc | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.25 | Vdc | IC = −100 mAdc, IB = −10 mAdc | 3 |
| Base-Emitter On Voltage | VBE(on) |  |  | -1.2 | Vdc | IC = −100 mAdc, VCE = −1.0 Vdc | 3 |
| Current-Gain - Bandwidth Product | fT | 50 |  |  | MHz | IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz | 3 |
| Collector-Emitter Voltage (MMBTA56, SMMBTA56) | VCEO |  |  | -80 | Vdc |  | 2 |
| Collector-Base Voltage (MMBTA56, SMMBTA56) | VCBO |  |  | -80 | Vdc |  | 2 |
| Emitter-Base Voltage | VEBO |  |  | -4 | Vdc |  | 2 |
| Collector Current - Continuous | IC |  |  | -500 | mAdc |  | 2 |
| Total Device Dissipation FR-5 Board | PD |  |  | 225 | mW | TA = 25°C (Note 1) | 2 |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA |  |  | 556 | °C/W |  | 2 |
| Total Device Dissipation Alumina Substrate | PD |  |  | 300 | mW | TA = 25°C (Note 2) | 2 |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RθJA |  |  | 417 | °C/W |  | 2 |
| Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 2 |

## CAD (KiCad official)

- Symbol: `SMMBTA56LT3G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `smmbta56lt3g-etched.step` / `smmbta56lt3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smmbta56lt3g.step` / `smmbta56lt3g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588929024236535808) (7 pp, sha256 `43769f24a1b46241`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/smmbta56lt3g-datasheet.pdf)