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Contents

README

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SMMBTA56LT3G

onsemi · Bipolar (BJT) · SOT-23

SMMBTA56LT3G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives an emitter-base breakdown minimum of −4.0 Vdc and a base-emitter on voltage of −1.2 Vdc maximum at IC = −100 mAdc, VCE = −1.0 Vdc.
2 EMITTER passive Emitter terminal of the PNP transistor; the absolute maximum emitter-base voltage VEBO is −4.0 Vdc.
3 COLLECTOR passive Collector terminal of the PNP transistor; for the SMMBTA56 the absolute maximum collector-emitter voltage VCEO is −80 Vdc and the continuous collector current IC is −500 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (MMBTA56, SMMBTA56 column) V(BR)CEO -80 Vdc IC = −1.0 mAdc, IB = 0 3
Emitter-Base Breakdown Voltage V(BR)EBO -4 Vdc IE = −100 Adc, IC = 0 3
Collector Cutoff Current ICES -0.1 Adc VCE = −60 Vdc, IB = 0 3
Collector Cutoff Current (MMBTA56, SMMBTA56 column) ICBO -0.1 Adc VCB = −80 Vdc, IE = 0 3
DC Current Gain hFE 100 IC = −10 mAdc, VCE = −1.0 Vdc 3
Collector-Emitter Saturation Voltage VCE(sat) -0.25 Vdc IC = −100 mAdc, IB = −10 mAdc 3
Base-Emitter On Voltage VBE(on) -1.2 Vdc IC = −100 mAdc, VCE = −1.0 Vdc 3
Current-Gain - Bandwidth Product fT 50 MHz IC = −100 mAdc, VCE = −1.0 Vdc, f = 100 MHz 3
Collector-Emitter Voltage (MMBTA56, SMMBTA56) VCEO -80 Vdc 2
Collector-Base Voltage (MMBTA56, SMMBTA56) VCBO -80 Vdc 2
Emitter-Base Voltage VEBO -4 Vdc 2
Collector Current - Continuous IC -500 mAdc 2
Total Device Dissipation FR-5 Board PD 225 mW TA = 25°C (Note 1) 2
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RθJA 556 °C/W 2
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C (Note 2) 2
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RθJA 417 °C/W 2
Junction and Storage Temperature TJ, Tstg -55 150 °C 2

CAD (KiCad official)

  • Symbol: SMMBTA56LT3G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: smmbta56lt3g-etched.step / smmbta56lt3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smmbta56lt3g.step / smmbta56lt3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 43769f24a1b46241, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF