# SMMBTA56LT1G

**onsemi** · Bipolar (BJT) · SOT-23

SMMBTA56LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet rates the emitter-base voltage at −4.0 Vdc minimum breakdown (V(BR)EBO) and gives no separate base current limit. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, rated with an emitter-base breakdown voltage V(BR)EBO of −4.0 Vdc and a continuous collector current limit of −500 mAdc at the collector. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; for the SMMBTA56LT1G (MMBTA56 type) the collector-emitter voltage VCEO is −80 Vdc and the continuous collector current IC is −500 mAdc. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (MMBTA56, SMMBTA56) | V(BR)CEO | -80 |  |  | Vdc | IC = -1.0 mAdc, IB = 0 | 2 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -4 |  |  | Vdc | IE = -100 Adc, IC = 0 | 2 |
| Collector Cutoff Current | ICES |  |  | -0.1 | Adc | VCE = -60 Vdc, IB = 0 | 2 |
| Collector Cutoff Current (MMBTA56, SMMBTA56) | ICBO |  |  | -0.1 | Adc | VCB = -80 Vdc, IE = 0 | 2 |
| DC Current Gain | hFE | 100 |  |  |  | IC = -10 mAdc, VCE = -1.0 Vdc | 2 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  |  | -0.25 | Vdc | IC = -100 mAdc, IB = -10 mAdc | 2 |
| Base-Emitter On Voltage | VBE(on) |  |  | -1.2 | Vdc | IC = -100 mAdc, VCE = -1.0 Vdc | 2 |
| Current-Gain - Bandwidth Product | fT | 50 |  |  | MHz | IC = -100 mAdc, VCE = -1.0 Vdc, f = 100 MHz | 2 |
| Collector-Emitter Voltage (SMMBTA56) | VCEO |  |  | -80 | Vdc |  | 1 |
| Collector-Base Voltage (SMMBTA56) | VCBO |  |  | -80 | Vdc |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | -4 | Vdc |  | 1 |
| Collector Current - Continuous | IC |  |  | -500 | mAdc |  | 1 |
| Junction and Storage Temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Total Device Dissipation, FR-5 Board | PD |  |  | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 1 |
| Derate above 25°C, FR-5 Board |  |  | 1.8 |  | mW/°C | FR-5 Board (Note 1), derate above TA = 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA |  |  | 556 | °C/W |  | 1 |
| Total Device Dissipation, Alumina Substrate | PD |  |  | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 1 |
| Derate above 25°C, Alumina Substrate |  |  | 2.4 |  | mW/°C | Alumina Substrate (Note 2), derate above TA = 25°C | 1 |
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA |  |  | 417 | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `SMMBTA56LT1G`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `smmbta56lt1g-etched.step` / `smmbta56lt1g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smmbta56lt1g.step` / `smmbta56lt1g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588936064601886720) (5 pp, sha256 `881203b18108eb32`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/smmbta56lt1g-datasheet.pdf)