component
SMMBTA56LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSMMBTA56LT1G
onsemi · Bipolar (BJT) · SOT-23
SMMBTA56LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the datasheet rates the emitter-base voltage at −4.0 Vdc minimum breakdown (V(BR)EBO) and gives no separate base current limit. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor, rated with an emitter-base breakdown voltage V(BR)EBO of −4.0 Vdc and a continuous collector current limit of −500 mAdc at the collector. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; for the SMMBTA56LT1G (MMBTA56 type) the collector-emitter voltage VCEO is −80 Vdc and the continuous collector current IC is −500 mAdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage (MMBTA56, SMMBTA56) | V(BR)CEO | -80 | Vdc | IC = -1.0 mAdc, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -4 | Vdc | IE = -100 Adc, IC = 0 | 2 | ||
| Collector Cutoff Current | ICES | -0.1 | Adc | VCE = -60 Vdc, IB = 0 | 2 | ||
| Collector Cutoff Current (MMBTA56, SMMBTA56) | ICBO | -0.1 | Adc | VCB = -80 Vdc, IE = 0 | 2 | ||
| DC Current Gain | hFE | 100 | IC = -10 mAdc, VCE = -1.0 Vdc | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.25 | Vdc | IC = -100 mAdc, IB = -10 mAdc | 2 | ||
| Base-Emitter On Voltage | VBE(on) | -1.2 | Vdc | IC = -100 mAdc, VCE = -1.0 Vdc | 2 | ||
| Current-Gain - Bandwidth Product | fT | 50 | MHz | IC = -100 mAdc, VCE = -1.0 Vdc, f = 100 MHz | 2 | ||
| Collector-Emitter Voltage (SMMBTA56) | VCEO | -80 | Vdc | 1 | |||
| Collector-Base Voltage (SMMBTA56) | VCBO | -80 | Vdc | 1 | |||
| Emitter-Base Voltage | VEBO | -4 | Vdc | 1 | |||
| Collector Current - Continuous | IC | -500 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 1 | ||
| Derate above 25°C, FR-5 Board | 1.8 | mW/°C | FR-5 Board (Note 1), derate above TA = 25°C | 1 | |||
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W | 1 | |||
| Total Device Dissipation, Alumina Substrate | PD | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 1 | ||
| Derate above 25°C, Alumina Substrate | 2.4 | mW/°C | Alumina Substrate (Note 2), derate above TA = 25°C | 1 | |||
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | 417 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
SMMBTA56LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
smmbta56lt1g-etched.step/smmbta56lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smmbta56lt1g.step/smmbta56lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
881203b18108eb32, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).