# SMF4N65

**HUAKE** · MOSFETs · TO-220F-3

SMF4N65 from HUAKE, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V with a gate threshold of 2.0 V to 4.0 V (VDS=VGS, ID=250 µA). |
| 2 | D | passive | Drain; drain-source voltage is rated at 650 V with 4.0 A continuous drain current at Tc=25C (limited by maximum junction temperature). |
| 3 | S | passive | Source; connects to the body diode anode, with a maximum continuous diode forward current of 4.0 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUAKE |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown Voltage (Drain-Source) | BVDSS | 650 |  |  | V | VGS=0V ,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=650V,VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS=520V,Tc=125C | 2 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 2.2 | 2.6 | Ω | VGS=10 V, ID=2.0A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 4 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 16 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS =0V,IS=4.0A | 2 |
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 4 | A | Tc=25C | 1 |
| Drain Current - Continuous | ID |  |  | 2.5 | A | Tc=100C | 1 |
| Drain Current - Pulsed (Note1) | IDM |  |  | 16 | A |  | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulsed Avalanche Energy (Note2) | EAS |  |  | 240 | mJ |  | 1 |
| Avalanche Current (Note1) | IAR |  |  | 4 | A |  | 1 |
| Repetitive Avalanche Energy (Note1) | EAR |  |  | 10 | mJ |  | 1 |
| Peak Diode Recovery dv/dt (Note3) | dv/dt |  |  | 4.5 | V/ns |  | 1 |
| Power Dissipation | PD |  |  | 33 | W | TC =25C | 1 |
| Power Dissipation Derating | PD |  |  | 0.26 | W/C | Derate above 25°C | 1 |
| Operating Junction Temperature | Tj |  |  | 150 | C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | C |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 3.79 | C /W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 62.5 | C /W |  | 1 |

## CAD (KiCad official)

- Symbol: `SMF4N65`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUAKE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588888948093693953) (5 pp, sha256 `336cce2f0f9a6327`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/smf4n65-datasheet.pdf)