component
SMF4N65
Public Made by Adomby adom
HUAKE MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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SMF4N65
HUAKE · MOSFETs · TO-220F-3
SMF4N65 from HUAKE, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V with a gate threshold of 2.0 V to 4.0 V (VDS=VGS, ID=250 µA). |
| 2 | D | passive | Drain; drain-source voltage is rated at 650 V with 4.0 A continuous drain current at Tc=25C (limited by maximum junction temperature). |
| 3 | S | passive | Source; connects to the body diode anode, with a maximum continuous diode forward current of 4.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAKE |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown Voltage (Drain-Source) | BVDSS | 650 | V | VGS=0V ,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=650V,VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=520V,Tc=125C | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS= VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 2.2 | 2.6 | Ω | VGS=10 V, ID=2.0A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 16 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS =0V,IS=4.0A | 2 | ||
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current - Continuous | ID | 4 | A | Tc=25C | 1 | ||
| Drain Current - Continuous | ID | 2.5 | A | Tc=100C | 1 | ||
| Drain Current - Pulsed (Note1) | IDM | 16 | A | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy (Note2) | EAS | 240 | mJ | 1 | |||
| Avalanche Current (Note1) | IAR | 4 | A | 1 | |||
| Repetitive Avalanche Energy (Note1) | EAR | 10 | mJ | 1 | |||
| Peak Diode Recovery dv/dt (Note3) | dv/dt | 4.5 | V/ns | 1 | |||
| Power Dissipation | PD | 33 | W | TC =25C | 1 | ||
| Power Dissipation Derating | PD | 0.26 | W/C | Derate above 25°C | 1 | ||
| Operating Junction Temperature | Tj | 150 | C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.79 | C /W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | C /W | 1 |
CAD (KiCad official)
- Symbol:
SMF4N65 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAKE datasheet (5 pp, sha256
336cce2f0f9a6327, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).