component
SMBTA06E6327HTSA1-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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SMBTA06E6327HTSA1-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
SMBTA06E6327HTSA1-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base voltage is limited to 4 V (VEBO) and DC current gain hFE(1) is 100 to 400 at VCE=1V, IC=10mA. |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 4 V minimum at IE=0.1mA. |
| 3 | C | passive | Collector of the NPN transistor; rated for VCBO and VCEO of 80 V, collector current of 120 mA and collector power dissipation of 300 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
SMBTA06E6327HTSA1-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
smbta06e6327htsa1-hxy-etched.step/smbta06e6327htsa1-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smbta06e6327htsa1-hxy.step/smbta06e6327htsa1-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
ffdfdfb8642a92c0, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SMBTA06E6327HTSA1-HXY
**HXY MOSFET** · Bipolar (BJT) · SOT-23
SMBTA06E6327HTSA1-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base voltage is limited to 4 V (VEBO) and DC current gain hFE(1) is 100 to 400 at VCE=1V, IC=10mA. |
| 2 | E | passive | Emitter of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 4 V minimum at IE=0.1mA. |
| 3 | C | passive | Collector of the NPN transistor; rated for VCBO and VCEO of 80 V, collector current of 120 mA and collector power dissipation of 300 mW. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `SMBTA06E6327HTSA1-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `smbta06e6327htsa1-hxy-etched.step` / `smbta06e6327htsa1-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smbta06e6327htsa1-hxy.step` / `smbta06e6327htsa1-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](docs/smbta06e6327htsa1-hxy-datasheet.pdf) (5 pp, sha256 `ffdfdfb8642a92c0`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/smbta06e6327htsa1-hxy-datasheet.pdf)