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SMBTA06E6327HTSA1-HXY

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by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SMBTA06E6327HTSA1-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

SMBTA06E6327HTSA1-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; emitter-base voltage is limited to 4 V (VEBO) and DC current gain hFE(1) is 100 to 400 at VCE=1V, IC=10mA.
2 E passive Emitter of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 4 V minimum at IE=0.1mA.
3 C passive Collector of the NPN transistor; rated for VCBO and VCEO of 80 V, collector current of 120 mA and collector power dissipation of 300 mW.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: SMBTA06E6327HTSA1-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: smbta06e6327htsa1-hxy-etched.step / smbta06e6327htsa1-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); smbta06e6327htsa1-hxy.step / smbta06e6327htsa1-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 ffdfdfb8642a92c0, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF