component
SMBJ6.5CA M4G
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Taiwan Semiconductor ESD And Surge Protection (TVS/ESD), DO-214AA(SMB). Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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SMBJ6.5CA M4G
Taiwan Semiconductor · ESD And Surge Protection (TVS/ESD) · DO-214AA(SMB)
SMBJ6.5CA M4G from Taiwan Semiconductor, in a DO-214AA(SMB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| Package | DO-214AA(SMB) |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown voltage, min (SMBJ6.5A row) | VBR | 7.22 | V | IT = 10 mA; Note 1: VBR measured after IT applied for 30 ms | 2 | ||
| Breakdown voltage, max (SMBJ6.5A row) | VBR | 7.98 | V | IT = 10 mA; Note 1: VBR measured after IT applied for 30 ms | 2 | ||
| Maximum blocking leakage current (SMBJ6.5A row) | ID | 500 | µA | @VWM = 6.5 V; Note 5: ID limit doubled for bipolar types with VWM of 10 V and under | 2 | ||
| Maximum peak impulse current (SMBJ6.5A row) | IPP | 56 | A | Note 2: surge waveform per Fig.3, derate per Fig.2 | 2 | ||
| Maximum clamping voltage (SMBJ6.5A row) | VC | 11.2 | V | @IPP | 2 | ||
| Non-repetitive peak impulse power dissipation | PPK | 600 | W | 10/1000µs waveform (Note 1) | 1 | ||
| Steady state power dissipation | PD | 3 | W | TA = 25°C | 1 | ||
| Junction temperature | TJ | -55 | 150 | °C | 1 | ||
| Storage temperature | TSTG | -55 | 150 | °C | 1 | ||
| Junction-to-case thermal resistance | RӨJC | 10 | °C/W | 2 | |||
| Junction-to-ambient thermal resistance | RӨJA | 55 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
SMBJ6.5CA M4G - Footprint:
Diode_SMD:D_SMB - 3D model: DO-214AA(SMB) (KiCad packages3D, STEP)
- 3D model files:
smbj6-5ca-m4g-etched.step/smbj6-5ca-m4g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);smbj6-5ca-m4g.step/smbj6-5ca-m4g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Taiwan Semiconductor datasheet (8 pp, sha256
6b1cb45d62a964cc, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# SMBJ6.5CA M4G
**Taiwan Semiconductor** · ESD And Surge Protection (TVS/ESD) · DO-214AA(SMB)
SMBJ6.5CA M4G from Taiwan Semiconductor, in a DO-214AA(SMB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Taiwan Semiconductor |
| Package | DO-214AA(SMB) |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Breakdown voltage, min (SMBJ6.5A row) | VBR | 7.22 | | | V | IT = 10 mA; Note 1: VBR measured after IT applied for 30 ms | 2 |
| Breakdown voltage, max (SMBJ6.5A row) | VBR | | | 7.98 | V | IT = 10 mA; Note 1: VBR measured after IT applied for 30 ms | 2 |
| Maximum blocking leakage current (SMBJ6.5A row) | ID | | | 500 | µA | @VWM = 6.5 V; Note 5: ID limit doubled for bipolar types with VWM of 10 V and under | 2 |
| Maximum peak impulse current (SMBJ6.5A row) | IPP | | | 56 | A | Note 2: surge waveform per Fig.3, derate per Fig.2 | 2 |
| Maximum clamping voltage (SMBJ6.5A row) | VC | | | 11.2 | V | @IPP | 2 |
| Non-repetitive peak impulse power dissipation | PPK | | | 600 | W | 10/1000µs waveform (Note 1) | 1 |
| Steady state power dissipation | PD | | | 3 | W | TA = 25°C | 1 |
| Junction temperature | TJ | -55 | | 150 | °C | | 1 |
| Storage temperature | TSTG | -55 | | 150 | °C | | 1 |
| Junction-to-case thermal resistance | RӨJC | | 10 | | °C/W | | 2 |
| Junction-to-ambient thermal resistance | RӨJA | | 55 | | °C/W | | 2 |
## CAD (KiCad official)
- Symbol: `SMBJ6.5CA M4G`
- Footprint: `Diode_SMD:D_SMB`
- 3D model: DO-214AA(SMB) (KiCad packages3D, STEP)
- 3D model files: `smbj6-5ca-m4g-etched.step` / `smbj6-5ca-m4g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `smbj6-5ca-m4g.step` / `smbj6-5ca-m4g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Taiwan Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589819276489363456) (8 pp, sha256 `6b1cb45d62a964cc`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/smbj6-5ca-m4g-datasheet.pdf)