# SM6512D1RL

**SPS** · MOSFETs · DFN-8-EP(6.1x5.2)

SM6512D1RL from SPS, in a DFN-8-EP(6.1x5.2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 2 and 3, carrying up to 150A continuous at TA=25°C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 3, carrying up to 150A continuous at TA=25°C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 2, carrying up to 150A continuous at TA=25°C. |
| 4 | G | input | Gate terminal, with maximum gate-source voltage of ±20V and a threshold of 1V min to 2V max at ID=250µA. |
| 5 | D | passive | Drain terminal, tied with pins 6, 7 and 8, rated for 30V drain-source voltage. |
| 6 | D | passive | Drain terminal, tied with pins 5, 7 and 8, rated for 30V drain-source voltage. |
| 7 | D | passive | Drain terminal, tied with pins 5, 6 and 8, rated for 30V drain-source voltage. |
| 8 | D | passive | Drain terminal, tied with pins 5, 6 and 7, rated for 30V drain-source voltage. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | DFN-8-EP(6.1x5.2) |
| Category | Transistors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID = -250uA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | uA | VDS=30V, VGS=0V | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2 | V | VDS = VGS ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 1.7 | 2.4 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 2.6 | 3.4 | mΩ | VGS=4.5V, ID=20A | 2 |
| Forward Transconductance | gFS |  | 70 |  | S | VDS=5V, ID=20A | 2 |
| Diode Forward Voltage | VSD |  | 0.72 | 1 | V | IS=1A | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 150 | A |  | 2 |
| Input Capacitance | Ciss | 3430 |  | 4184 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | 1327 |  | 1632 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 175 |  | 208 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Body Diode Reverse Recovery Time | trr |  |  | 22 | ns | IF=-8A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  |  | 58 | nC | IF=18A, dI/dt=500A/µs | 2 |
| Gate resistance | Rg |  | 5.15 |  | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg |  | 25 |  | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Total Gate Charge (4.5V) | Qg |  | 12.5 |  | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Gate Source Charge | Qgs |  | 7.21 |  | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Gate Drain Charge | Qgd |  | 10.3 |  | nC | VGS=10V, VDS=15V, ID=20A | 2 |
| Turn-On Delay Time | tD(on) |  | 11 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 8.8 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | tD(off) |  | 30.8 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 9.9 |  | ns | VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 150 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | 115 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 240 | A |  | 1 |
| Avalanche Current | IAR |  |  | 48 | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | 110.4 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD |  |  | 83 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 33 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 6 | 9 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient | RθJA |  | 12 | 14 | °C/W | Steady State | 1 |
| Maximum Junction-to-Lead | RθJL |  | 3 | 5 | °C/W | Steady State | 1 |

## CAD (KiCad official)

- Symbol: `SM6512D1RL`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8-EP(6.1x5.2) (KiCad packages3D, STEP)
- 3D model files: `sm6512d1rl-etched.step` / `sm6512d1rl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm6512d1rl.step` / `sm6512d1rl.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [SPS datasheet](docs/sm6512d1rl-datasheet.pdf) (4 pp, sha256 `6220dd99fb688a33`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sm6512d1rl-datasheet.pdf)