# SM4807PRL

**SPS** · MOSFETs · SOIC-8

SM4807PRL from SPS, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (P-channel); drain-source voltage rated -30V. |
| 2 | G2 | input | Gate of MOSFET 2; gate-source voltage max ±20V, threshold VGS(th) -1.2 to -2.4V typ -1.8V. |
| 3 | S1 | passive | Source of MOSFET 1 (P-channel); drain-source voltage rated -30V. |
| 4 | G1 | input | Gate of MOSFET 1; gate-source voltage max ±20V, threshold VGS(th) -1.2 to -2.4V typ -1.8V. |
| 5 | D1 | passive | Drain of MOSFET 1; continuous drain current -6.0A at TA=25°C, pulsed -9.6A. |
| 6 | D1 | passive | Drain of MOSFET 1; continuous drain current -6.0A at TA=25°C, pulsed -9.6A. |
| 7 | D2 | passive | Drain of MOSFET 2; continuous drain current -6.0A at TA=25°C, pulsed -9.6A. |
| 8 | D2 | passive | Drain of MOSFET 2; continuous drain current -6.0A at TA=25°C, pulsed -9.6A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | SPS |
| Package | SOIC-8 |
| Category | Transistors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -6 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | -5 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | -9.6 | A |  | 1 |
| Avalanche Current | IAR |  |  | -1.9 | A |  | 1 |
| Repetitive avalanche energy | EAR |  |  | -4.4 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 1.3 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Junction-to-Ambient | RθJA |  | 145 | 217 | °C/W | t ≤ 10s | 1 |
| Junction-to-Ambient | RθJA |  | 290 | 348 | °C/W | Steady State | 1 |
| Junction-to-Lead | RθJL |  | 87 | 139 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | ID = -250uA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | uA | VDS=-30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | uA | VDS=-30V, VGS=0V | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.8 | -2.4 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 40.6 | 58 | mΩ | VGS=-10V, ID=-6A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 63.8 | 82.9 | mΩ | VGS=-4.5V, ID=-6A | 2 |
| Forward Transconductance | gFS |  | 48 |  | S | VDS=-5V, ID=-6A | 2 |
| Diode Forward Voltage | VSD |  | -0.72 | -1 | V | IS=-1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | -6 | A |  | 2 |
| Input Capacitance | Ciss | 760 | 927 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Output Capacitance | Coss | 140 | 172 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 95 | 113 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Gate resistance | Rg |  | 1.6 |  | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg (10V) |  | 6.7 |  | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 |
| Total Gate Charge (4.5V) | Qg (4.5V) |  | 3.35 |  | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 |
| Gate Source Charge | Qgs |  | 2.24 |  | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 |
| Gate Drain Charge | Qgd |  | 3.2 |  | nC | VGS=-10V, VDS=-15V, ID=-6A | 2 |
| Turn-On DelayTime | tD(on) |  | 7.5 |  | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 6 |  | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 21 |  | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 6.75 |  | ns | VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 15 |  | ns | IF=-8A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 9.7 |  | nC | IF=18A, dI/dt=500A/µs | 2 |

## CAD (KiCad official)

- Symbol: `SM4807PRL`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `sm4807prl-etched.step` / `sm4807prl-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `sm4807prl.step` / `sm4807prl.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [SPS datasheet](docs/sm4807prl-datasheet.pdf) (4 pp, sha256 `b913482c37921171`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sm4807prl-datasheet.pdf)